| Sr. | Title | File | Year Sort ascending |
|---|---|---|---|
| 401 | Morphology of Si(100) surfaces exposed to a remote H plasma, J.S. Montgomery, T.P. Schneider, R.J. Carter, J.P. Barnak, Y.L. Chen, J.R. Hauser, and Robert J. Nemanich, Applied Physics Letters, Vol: 67, 2194 Read more... | PDF (479.48 KB) | |
| 402 | Raman scattering study of interface reactions of Co/SiGe, Hong Ying, Zhihai Wang, D.B. Aldrich, D.E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 320, 335-340 Read more... | ||
| 403 | Titanium germanosilicide: phase formation, segregation, and morphology, D.B. Aldrich, Y.L. Chen, D.E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 320, 305-310 Read more... | ||
| 404 | Phase formations in Co/Si, Co/Ge, and Co/Si1-xGex by solid phase reactions, Z. Wang, Y.l. Chen, H. Ying, D.E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 320, 397-402 Read more... | ||
| 405 | Effect of surface hydrogen on metal-diamond interface properties, T. Tachibana, J.T. Glass, and Robert J. Nemanich, Journal of Applied Physics, Vol: 73, 835 Read more... | PDF (1.36 MB) | |
| 406 | Surface Characterization, G.E. McGuire, M.A. Ray, S.J. Simko, F.K. Perkins, S.L. Brandow, E.A. Dobisz, Robert J. Nemanich, A.R. Chourasia, D.R. Chopra, Analytical Chemistry, Vol: 65, 311-333 Read more... | ||
| 407 | Plasma surface interactions and surface properties for remote H-plasma cleaning of Si(100), T.P. Schneider, J. cho, Y.L. Chen, D.M. Maher, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 315, 197-209 Read more... | ||
| 408 | Phase transition and formation of TiSi2 codeposited on atomically clean Si(111), J. Hyeongtag, Y.S. Cho, E.Y. Kang, J.W. Park, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 311, 275-280 Read more... | PDF (1.75 MB) | |
| 409 | Study of surface and subsurface properties of Si(100) after hydrogen ion-beam exposure, H.X. Liu, T.P. Schneider, J. Montgomery, Y.L. Chen, A. Buczkowski, F. Shimura, Robert J. Nemanich, D.M. Maher, D. Korzec, J. Engemann, Materials Research Society Symposium Proceedings, Vol: 315, 231-236 Read more... | ||
| 410 | Properties of interfaces of diamond, Robert J. Nemanich, L. Bergman, K.F. Turner, J. van der Weide, and T.P. Humphreys, Physica B, Vol: 185, 528-538 Read more... | PDF (1.06 MB) | |
| 411 | Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics, X. Xu, R.T. Kuehn, M. C. Ozturk, J.J. Wortman, G.S. Harris, D.M. Maher, and Robert J. Nemanich, Journal of Electronic Materials, Vol: 22, 335-339 Read more... | PDF (1.25 MB) | |
| 412 | Argon and hydrogen plasma interactions on diamond (111) surfaces: Electronic states and structure, J. van der Weide and Robert J. Nemanich, Applied Physics Letters, Vol: 62, 1878 Read more... | PDF (663.18 KB) | |
| 413 | Investigation of titanium silicon and germanium reaction, D.B. Aldrich, D.E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 280, 585-588 Read more... | ||
| 414 | Surface and interface morphology of small islands of TiSi2 and ZrSi2 on (001) silicon, B.L. Kropman, C.A. Sukow, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 280, 589-692 Read more... | ||
| 415 | Xafs study of some titanium silicon and germanium compounds, D.B. Aldrich, D.E. Sayers, and Robert J. Nemanich, Japanese Journal of Applied Physics, Vol: 32 Read more... | PDF (585.23 KB) | |
| 416 | Exafs study of the initial interface region formed by thin zirconium and titanium films on silicon(111), A.M. Edwards, Y. Dao, D.E. Sayers, and Robert J. Nemanich, Japanese Journal of Applied Physics, Vol: 32, 393 Read more... | PDF (560.95 KB) | |
| 417 | Microphotoluminescence and Raman scattering study of defect formation in diamond films, L. Bergman, B.R. Stoner, K.F. Turner, J.T. Glass, and Robert J. Nemanich, Journal of Applied Physics, Vol: 73, 3951 Read more... | PDF (1.14 MB) | |
| 418 | X-ray Absorption Study of the Reaction of Zirconium Thin Films on Silicon(111), Y. Dao, A.M. Edwards, D.E. Sayers, and Robert J. Nemanich, Japan Journal of Applied Physics, Vol: 32 Read more... | PDF (590.86 KB) | |
| 419 | Surface electronic states and stability of the H-terminated Si(100) 1×1 surface produced by low-temperature H-plasma exposure, J. Cho and Robert J. Nemanich, Physical Review B, Vol: 46, 15212 Read more... | ||
| 420 | Surface electronic states of low-temperature H-plasma-exposed Ge(100), J. Cho and Robert J. Nemanich, Physical Review B, Vol: 46 Read more... | ||
| 421 | Growth and characterization of titanium silicide films on natural diamond c(001) substrates, T.P. Humphreys, J.V. Labrasca, K.F. Turner, Robert J. Nemanich, K. Das, J.B. Posthill, J.D. Hunn, N.R. Parikh, Japanese Journal of Applied Physics, Vol: 31, 2369-2373 Read more... | ||
| 422 | Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD, B.R. Stoner, J.T. Glass, L. Bergman, Robert J. Nemanich, L.D. Zoltal, J.W. Vandersande, Journal of Electronic Materials, Vol: 21, 629-634 Read more... | PDF (1.22 MB) | |
| 423 | Effects of boron doping on the surface morphology and structural imperfections of diamond films, X.H. Wang, G.-H. M. Ma, Wei Zhu, J.T. Glass, L. Bergman, K.F. Turner, and Robert J. Nemanich, Diamond and Related Materials, Vol: 1, 828-835 Read more... | PDF (1020.98 KB) | |
| 424 | Piezoelectric measurements with atomic force microscopy, H. Jeon, C.A. Sukow, J.W. Honeycutt, G.A. Rozgonyi, and Robert J. Nemanich, Journal of Applied Physics, Vol: 71, 4269-4276 Read more... | ||
| 425 | Transmission electron microscopy and vibrational spectroscopy studies of undoped and doped Si,H and Si,C:H films, Y.L. Chen, C. Wang G. Lucovsky, D.M. Maher, and Robert J. Nemanich, Journal of Vacuum Science and Technology A, Vol: 10, 874 Read more... | ||
| 426 | Chemical vapor deposition of diamond films from water vapor rf-plasma discharges, R.A. Rudder, G.C. Huson, J.B. Posthill, R.E. Thomas, R.C. Hendry, D.P. Malta, R.J. Markunas, T.P. Humphreys, and Robert J. Nemanich, Applied Physics Letters, Vol: 60, 329 Read more... | ||
| 427 | Titanium Silicide Contacts on Semiconducting Diamond Substrates, T.P. Humphreys, J.V. Labrasca, R.J. Nemanich, K. Das, J.B. Posthill , Electronic Letters, Vol: 27 Read more... | ||
| 428 | UV Raman study of A1(LO) and E2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates, T.P. Humphreys, J.v. Labrasca, Robert J. Nemanich, K. Das, J.B. Posthill, Japanese Journal of Applied Physics, Vol: 30, L1409-L1411 Read more... | ||
| 429 | Surface electronic states of low-temperature H-plasma cleaned Si(100), Jaewon Cho, T. P. Schneider, J. VanderWeide, Hyeongtag Jeon, and R. J. Nemanich , Applied Physics Letters, Vol: 59 Read more... |
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| 430 | Surface Characterization, M. A. Ray, G. E. McGuire, I. H. Musselman, R. J. Nemanich, and D. R. Chopra, Analytical Chemistry, Vol: 63, 99-118 Read more... | ||
| 431 | Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition, G. Lucovsky, Cheng Wang, Robert J. Nemanich, and M.J. Williams, Solar Cells, Vol: 30, 419-434 Read more... | PDF (994.57 KB) | |
| 432 | Observation of surface modification and nucleation during deposition of diamond on silicon by scanning tunneling microscopy, K.F. Turner, B.R. Stoner, L. Bergman, J.T. Glass, and Robert J. Nemanich, Journal of Applied Physics, Vol: 69 PDF | ||
| 433 | Microstructures and domain size effects in diamond films characterized by Raman spectroscopy, Robert J. Nemanich, L. Bergman, Y.M. LeGrice, K.F. Turner, and T.P. Humphreys, Proceedings of SPIE - the International Society for Optical Engineering, Vol: 1437, 2-12 Read more... | ||
| 434 | Interface Reactions of Titanium on Single Crystal and Thin Film Diamond Analyzed by UV Photoemission Spectroscopy, J. van der Weide and Robert J. Nemanich, Materials Science Monographs, Vol: 73, 359-364 Read more... | PDF (361.8 KB) | |
| 435 | Characterization of Titanium Silicide Contacts Deposited on Semiconducting Diamond Substrates, T.P. Humphreys, H. Jeon, J.V. LaBrasca, K.F. Turner, Robert J. Nemanich, K. Das, and J.B. Posthill, Materials Science Monographs, Vol: 73, 353-358 Read more... | PDF (500.51 KB) | |
| 436 | Growth and characterization of diamond thin films, , and Robert J. Nemanich, Annual Review of Materials Science, Vol: 21, 535-558 Read more... | ||
| 437 | Deposition and characterization of amorphous and micro-crystalline Si,C alloy thin films by a remote plasma-enhanced chemical-vapor deposition process - RPECVD, C. Wang, G. Lucovsky, and Robert J. Nemanich, Journal of Non-Crystalline Solids, Vol: 137-138, 741-744 Read more... | PDF (410.25 KB) | |
| 438 | Vapor deposition of diamond thin films on various substrates, Y.H. Lee, J. Bachmann, J.T. Glass, Y.M. LeGrice, and Robert J. Nemanich, Applied Physics Letters, Vol: 57 Read more... | ||
| 439 | Photoluminescence Spectroscopy Measurement of Elastic Strain in Heteroepitaxial Gaas Films, T.P. Humphreys, R.J. Nemanich, K. Das, .R. Parikh, and J.B. Posthill , Electronic Letters, Vol: 26, 835-837 Read more... | ||
| 440 | Photoluminescence above the Tauc gap in a-Si:H, I. H. Campbell, P. M. Fauchet, S. A. Lyon, and R. J. Nemanich, Physical Review B, Vol: 41, 9871-9879 Read more... | ||
| 441 | Analysis of the composite structures in diamond thin films by Raman spectroscopy, R. E. Shroder, R. J. Nemanich, and J. T. Glass, and Robert J. Nemanich, Physical Review B, Vol: 41, 3738 Read more... | ||
| 442 | Surface morphology of TiSi2 on silicon, Hyeongtag Jeon and R.J.Nemanich, Thin Solid Films, Vol: 184, 357-363 Read more... | ||
| 443 | Ultrafast recombination and trapping in amorphous silicon, A. Esser, K. Seibert, H. Kurz, G.N. Parsons, C. Wang, B.N. Davidson, G. Lucovsky, and Robert J. Nemanich, Physical Review B, Vol: 41, 2879-2884 Read more... | ||
| 444 | Raman scattering from microcrystalline Si films: Considerations of composite structures with different optical absorption properties, Robert J. Nemanich, E.C. Buehler, Y.M. Legrice, R.E. Shroder, G.N. Parsons, C. Wang, C. Lucovsky, and J.B. Boyce, Journal of Non-Crystalline Solids, Vol: 114, 813-815 Read more... | ||
| 445 | Ultrafast recombination and trapping in amorphous silicon, A. Esser, K. Seibert, H. Kurz, G.N. Parsons, C. Wang, B.N. Davidson, G. Lucovsky, and Robert J. Nemanich, Journal of Non-Crystalline Solids, Vol: 114, 573-575 Read more... | ||
| 446 | Luminescence above the Tauc gap in a-Si:H, P.M. Fauchet, I.H. Campbell, S.A. Lyon, and Robert J. Nemanich, Journal of Non-Crystalline Solids, Vol: 114, 277-279 Read more... | ||
| 447 | Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant, B.N. Davidson, G. Lucovsky. G.N. Parsons, R.J. Nemanich. A. Esser, K. Seibert, and H. Kurz, Journal of Non-Crystalline Solids, Vol: 114, 579-581 Read more... | ||
| 448 | Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy, J.B. Posthill, R.J. Markunas, T.P. Humphreys, and Robert J. Nemanich, Applied Physics Letters, Vol: 55, 1756 Read more... | ||
| 449 | Boron doping of diamond thin films, J. Mort, D. Kuhman, M. Machonkin, M. Morgan, F. Jansen, K. Okumura, Y.M. LeGrice, and Robert J. Nemanich, Applied Physics Letters, Vol: 55, 1121 Read more... | ||
| 450 | Surface Characterization, J.E. Fulghum, G.E. McGuire, I.H. Musselman, Robert J. Nemanich, J.m. White, D.R. Chopra, and A.R. Chourasia, Analytical Chemistry, Vol: 61, 165-191 Read more... |