Contributors: P.M. Fauchet, I.H. Campbell, S.A. Lyon, and Robert J. Nemanich
ABSTRACT
We report the first observation and full characterization of the weak photoluminescence signal at and above the Tauc gap in a-Si:H. Detailed spectral dependence on temperature (from 10 K to 500 K), Tauc gap, deep defect density and laser power density is reported. The origin of the signal is discussed in terms of the carrier dynamics.