Free carrier absorption and the transient optical properties of amorphous silicon thin films: A model including time dependent free carrier, and static and dispersive interband contributions to the complex dielectric constant

Contributors:   B.N. Davidson, G. Lucovsky. G.N. Parsons, R.J. Nemanich. A. Esser, K. Seibert, and H. Kurz

ABSTRACT

A model for free-carrier relaxation, including dispersion in the dielectric function of the host is developed for a-Si and a-Si:H. The model is applicable for probe-beam pulse energies in the spectral regime of the absorption edge, from ∼1–3 eV.

Publisher: Journal of Non-Crystalline Solids,   Volume: 114,   579-581 ||  Published: 1989-12 ||   Read more...