Study of surface and subsurface properties of Si(100) after hydrogen ion-beam exposure
Contributors: H.X. Liu, T.P. Schneider, J. Montgomery, Y.L. Chen, A. Buczkowski, F. Shimura, Robert J. Nemanich, D.M. Maher, D. Korzec, J. Engemann
ABSTRACT
The time/temperature dependencies of the surface roughness, subsurface extended defect formation, and minority-carrier lifetime are reported for n-type (100) silicon wafers exposed to a hydrogen ion beam. Surface roughness is assessed from atomic force microscopy, the distribution and nature of extended defects are determined from transmission electron microscopy, and the minority-carrier lifetime is evaluated by a non-contact laser-microwave technique. The surface roughness exhibits a weak dependence on ion-beam exposure time for the temperature range studied, whereas the distribution of extended defects may depend on exposure time at a given wafer temperature. The surface and bulk components of the minority-carrier lifetimes are consistent with these surface and subsurface properties. Transmission electron microscopy analyses demonstrate that the associated strain field of the extended defects is compressive in nature.
Publisher: Materials Research Society Symposium Proceedings,
Volume: 315,
231-236 ||
Published:
||
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