Surface and interface morphology of small islands of TiSi2 and ZrSi2 on (001) silicon

Contributors:   B.L. Kropman, C.A. Sukow, and Robert J. Nemanich

ABSTRACT

The morphology of small islands of TiSi2 and ZrSi2 on Si(100) is investigated and compared to larger islands in terms of a solid state capillarity model. The silicide islands are formed by deposition of very thin layers of titanium and zirconium (3-50 Angstrom) followed by an anneal at high temperatures (700-1200°C). SEM and cross-sectional HRTEM are used to study respectively the surface and interface morphology. It is found that the C49-phase for TiSi2 is stable for layers as thin as 8 Angstrom, and annealing temperatures as high as 1200°C. An explanation for the fact that the formed islands align parallel to the Si directions is given in terms of interplanar lattice spacings.

Publisher: Materials Research Society Symposium Proceedings,   Volume: 280,   589-692 ||  Published: 1993-01 ||   Read more...