Surface electronic states of low-temperature H-plasma cleaned Si(100)
Contributors: Jaewon Cho, T. P. Schneider, J. VanderWeide, Hyeongtag Jeon, and R. J. Nemanich
ABSTRACT
The surface of low‐temperature H‐plasma cleaned Si(100) was studied by angle‐resolved UV photoemission spectroscopy. The cleaning process involved an ex situ wet chemical preclean followed by an in situ H‐plasma exposure at a substrate temperature of 300 °C. After the in situ H‐plasma exposure, a 2×1 ordered surface was obtained which exhibited two hydrogen‐induced surface states/resonances in the UV photoemission spectra. The temperature dependence of the spectra showed that the Si‐H monohydride started to dissociate at a temperature below 500 °C, and the dangling‐bond surface states were identified. The spectroscopic properties of the low‐temperature H‐plasma surface were essentially identical to surfaces prepared by ultrahigh vacuum high‐temperature annealing followed by H passivation.