Raman scattering study of interface reactions of Co/SiGe

Contributors:   Hong Ying, Zhihai Wang, D.B. Aldrich, D.E. Sayers, and Robert J. Nemanich

ABSTRACT

Raman scattering measurements are used to characterize Co/Si, Co/Ge and Co/Si0.8Ge0.2 thin film reactions. For Co/Si samples, the phase transitions Co - CoSi - CoSi2 are identified by Raman spectroscopy. For Co/Ge samples, Raman features associated with Co5Ge7 and CoGe2 phases were observed. For Co/Si0.8Ge0.2 samples, only CoSi was identified along with Ge enriched SiGe alloy peaks. No features associated with CoGe or Co(SiGe) were found.

Publisher: Materials Research Society Symposium Proceedings,   Volume: 320,   335-340 ||  Published: 1994-01 ||   Read more...