Raman scattering from microcrystalline Si films: Considerations of composite structures with different optical absorption properties
Contributors: Robert J. Nemanich, E.C. Buehler, Y.M. Legrice, R.E. Shroder, G.N. Parsons, C. Wang, C. Lucovsky, and J.B. Boyce
ABSTRACT
Raman scattering measurements are used to characterize the amorphous and crystalline components of microcrystalline Si films. A model is described which addresses the properties of Raman scattering from composites of materials of different optical absorption. The analysis shows that the observed spectra is dependent on both the percentage of the components and on the domain size of the more highly absorbing domains. Samples of microcrystalline silicon prepared by excimer laser exposure of hydrogenated a-Si and by magnetron sputtering were measured, and the results were analyzed in terms of the model. The experimental results reflect the length scales of the domains and vibrational excitations.