Deposition and characterization of amorphous and micro-crystalline Si,C alloy thin films by a remote plasma-enhanced chemical-vapor deposition process - RPECVD

Contributors:   C. Wang, G. Lucovsky, and Robert J. Nemanich

ABSTRACT

The RPECVD process has been extended to deposit a-Si,C:H and μc-Si,C:H. The degree of crystallinity in the μc-Si,C:H alloys is lower than in μc-Si:H films deposited under comparable conditions. Attempts to dope μc-Si,C:H alloys indicate that high levels of both B and P doping can promote a transition from μc-Si,C:H to a-Si,C:H. Raman spectra indicate that crystallites in the μc-Si,C:H alloys are Si, while IR measurements show that the amorphous component is an a-Si,C:H alloy.

Publisher: Journal of Non-Crystalline Solids,   Volume: 137-138,   741-744 ||  Published: 1991-01 ||   PDF (410.25 KB) ||   Read more...