Photoluminescence Spectroscopy Measurement of Elastic Strain in Heteroepitaxial Gaas Films
Contributors: T.P. Humphreys, R.J. Nemanich, K. Das, .R. Parikh, and J.B. Posthill
ABSTRACT
GaAs films have been grown on silicon and various insulating substrates. These include silicon-on-sapphire, silicon with a buried implanted oxide, and single crystal sapphire. Quantitative comparison of the respective measured shifts in the dominant photoluminescence peaks (7K) indicates that the GaAs layers deposited on silicon-on-sapphire substrates that have been microstructurally upgraded by the double solid-phase epitaxy process are strain-free.