Robert-Nemanich

Publications

ORCID
Sr. Title File Year
251 Growth and characterization of GaN single crystals, C.M. Balkas, Z. Sitar, L. Bergman, I.K. Shmagin, J.F. Muth, R. Kolbas, Robert J. Nemanich, and R.F. Davis, Journal of Crystal Growth, Vol: 208, 100-106 Read more... PDF (401.87 KB)
252 Quantitative analysis of a-Si1-xCx : H thin films by vibrational spectroscopy and nuclear methods, D. Gracin, I. Bogdanovic, V. Borjanovic, M. Jaksic, Z. Pastuovic, J.M. Dutta, B. Vlahovic, and Robert J. Nemanich, Vacuum, Vol: 61, 303-308 Read more...
253 Photoemission of the SiO2–SiC heterointerface, M.L. O'Brien, C. Koitzsch, and Robert J. Nemanich, Journal of Vacuum Science and Technology B, Vol: 18 Read more... PDF (134.86 KB)
254 Spatial variation of ferroelectric properties in Pb(Zr0.3, Ti0.7)O3 thin films studied by atomic force microscopy, J.A. Christman, S.-H. Kim, H. Maiwa, J.-P. Maria, B.J. Rodriguez, A.I. Kingon, and Robert J. Nemanich, Journal of Applied Physics, Vol: 87, 8201-8304 Read more... PDF (512.42 KB)
255 Anomalous field enhancement in planar semiconducting cold cathodes from spontaneous ordering in the accumulation region, G.L. Bilbro and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 621, R641-R647 Read more... PDF (512.46 KB)
256 Thermionic FEEM, PEEM and I/V measurements of N-doped CVD diamond surfaces, F.A.M. Koeck, J.M. Garguilo, B. Brown, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 621, R651-R656 Read more... PDF (591.08 KB)
257 Materials Research Society Symposium - Proceedings: Preface, K.L. Jensen, Robert J. Nemanich, P. Holloway, T. Trottier, W. Mackie, D. Temple, and J. Itoh, Materials Research Society Symposium Proceedings, Vol: 621, xv-xvi Read more...
258 Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice, L. Bergman, M. Dutta, M.A. Stroscio, S.M. Komirenko, Robert J. Nemanich, C.J. Eiting, D.J.H. Lambert, H.K. Kwon, and R.D. Dupuis, Applied Physics Letters, Vol: 76, 1969-1971 Read more... PDF (391.96 KB)
259 Nongeometric field enhancement in semiconducting cold cathodes and in metal-insulator-semiconductor structures, G.L. Bilbro and Robert J. Nemanich, Applied Physics Letters, Vol: 76, 891-893 Read more... PDF (330.12 KB)
260 Real-time observation of Pt-Si micro-droplet migration by photo-electron emission microscopy, W. Yang, H. Ade, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 584, 201-206 Read more...
261 Stress relaxation in uniquely oriented SiGe/Si epitaxial layers, M.E. Ware and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 594, 163-168 Read more...
262 Electrical properties of nanoscale tisi2 islands on si, J. oh, H. Ham, P. Laloli, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 583, 111-116 Read more...
263 Schottky barrier height and electron affinity of titanium on AIN, B.L. Ward, J.D. Hartman, E.H. Hurt, K.M. Tracy, R.F. Davis, and Robert J. Nemanich, Journal of Vacuum Science and Technology B: Microelectronics and nanometer Structures, Vol: 18, 2082-2087 Read more...
264 Surface residue island nucleation in anhydrous HF/alcohol vapor processing of Si surfaces, Richard J. Carter, John R. Hauser, and Robert J. Nemanich, Journal of the Electrochemical Society, Vol: 147 Read more... PDF (591.08 KB)
265 Effect of interface manipulation for MBE growth of AlN on 6H-SiC, K. Naniwae, J. Hartman, C. Petrich, R.F. Davis, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 622, T561-T566 Read more... PDF (1.31 MB)
266 Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001), J.D. Hartman K. Naniwae, C. Petrich, V. Ramachandran, R.M. Feenstra, Robert J. Nemanich, and R.F. Davis, Materials Science Forum, Vol: 338 Read more...
267 Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles, Minseo Park, S.M. Camphausen, A.F. Myers, P.T. Barletta, V. Sakhrani, L. Bergman, Robert J. Nemanich, and Jerome J. Cuomo, Materials Letters, Vol: 41, 229-233 Read more... PDF (406.2 KB)
268 Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface, S.W. King, R.F. Davis, C. Ronning, and Robert J. Nemanich, Journal of Electronic Materials, Vol: 28, L34-L37 Read more... PDF (125.06 KB)
269 X-ray photoelectron spectroscopy analysis of GaN/(0001)AIN and AIN/(0001)GaN growth mechanisms, S.W. King, E.P. Carlson, R.J. Therrien, J.A. Christman, R.J. Nemanich, and R.F. Davis , Journal of Applied Physics, Vol: 86, 5584-5593 Read more... PDF (850.72 KB)
270 Optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique, Kim, S.-H., Kim, D.J., Lee, K.M. Park, M., Kingon, A.I., Robert J. Nemanich, Im, J., and Streiffer, S.K., Journal of Materials Research, Vol: 14, 4395-4401 Read more... PDF (399.21 KB)
271 Germanium segregation in the Co/SiGe/Si(001) thin film system, P.T. Goeller, B.I. Boyanov, D.E. Sayers, Robert J. Nemanich, A.F. Myers, and E.B. Steel, Journal of Materials Research, Vol: 14, 4372-4384 Read more... PDF (953.74 KB)
272 Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H-AIN/6H-SiC interfaces, S.W. King, R.F. Davis, C. Ronning, M.C. Benjamin, and Robert J. Nemanich, Journal of Applied Physics, Vol: 86, 8 Read more... PDF (441.39 KB)
273 Field emission properties of nitrogen-doped diamond films, A.T. Sowers, B.L. Ward, S.L. English, and Robert J. Nemanich, Journal of Applied Physics, Vol: 86, 3973-3982 Read more... PDF (981.6 KB)
274 Growth of epitaxial CoSi2 on SiGe(001), B.I. Boyanov, P.T. Goeller, D.E. Sayers, and Robert J. Nemanich, Journal of Applied Physics, Vol: 86, 1355-1362 Read more... PDF (1.03 MB)
275 Surface characterization, G.E. McGuire, D.J. Fuchs, P. Han, J.G. Kushmerick, P.S. Weiss, S.J. Simko, D.R. Chopra, and Robert J. Nemanich, Analytical Chemistry, Vol: 71, 373R-388R Read more...
276 The effect of germanium on the Co-SiGe thin-film reaction, B.I. Boyanov, P.T. Goeller, D.E. Sayers, and Robert J. Nemanich, Journal of Synchrotron Radiation, Vol: 6, 521-523 Read more... PDF (880.71 KB)
277 Cobalt silicide formation on 6H silicon carbide, A.O. Porto, B.I. Boyanov, D.E. Sayers, and Robert J. Nemanich, Journal of Synchrotron Radiation, Vol: 6, 188-189 Read more... PDF (217.42 KB)
278 Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy, Robert J. Nemanich, S.L. English, J.D. Hartman, A.T. Sowers, B.L. Ward, H. Ade, and R.F. Davis, Applied Surface Science, Vol: 146, 287-294 Read more... PDF (766.11 KB)
279 Reduction of the phase transition temperature of TiSi2 on Si(111) using a Ta interlayer, B. Jung, Y.D. Kim, W. Yang, H. Jeon, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 564, 59-64 Read more... PDF (2.72 MB)
280 Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si(100), E. Maillard-Schaller, B.I. Boyanov, S. English, and Robert J. Nemanich, Journal of Applied Physics, Vol: 85, 3614-3618 Read more... PDF (604.99 KB)
281 Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AIN, L. Bergman, M. Dutta, C. Balkas, R.F. Davis, J.A. Christman, D. Alexson, and Robert J. Nemanich, Journal of Applied Physics, Vol: 85, 3535-3539 Read more... PDF (473.63 KB)
282 Confined phonons and phonon-mode properties of III-V nitrides with wurtzite crystal structure, D. Alexson, Leah Bergman, Mitra Dutta, K.W. Kim, S. Komirenko, Robert J. Nemanich, B.C. Lee, Michael A. Stroscio, and SeGi Yu, Physica B: Condensed Matter, Vol: 263-264, 510-513 Read more... PDF (122.13 KB)
283 Chemical vapor cleaning of 6H-SiC surfaces, Sean W. King, R. Scott Kern, Mark C. Benjamin, John P. Barnak, Robert J. Nemanich, and Robert F. Davis, Journal of the Electrochemical Society, Vol: 146 Read more... PDF (532.28 KB)
284 Dry Ex Situ Cleaning Processes for  ( 0001 ) Si 6H‐SiC Surfaces, Sean W. King, Robert J. Nemanich, and Robert F. Davis, Journal of the Electrochemical Society, Vol: 146 Read more... PDF (338.86 KB)
285 Piezoelectric measurements with atomic force microscopy, J.A. christman, H. Maiwa, S.-H. Kim, A.I. Kingon, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 541 Read more...
286 Hydrogen plasma removal of post-RIE residue for backend processing, A. Somashekhar, H. Ying, P.B. Smith, D.B. Aldrich, and Robert J. Nemanich, Journal of the Electrochemical Society, Vol: 146 Read more... PDF (657.79 KB)
287 Phonon dynamics and lifetimes of ain and gan crystallites, L. Bergman, D. Alexson, Robert J. Nemanich, M. Dutta, M.A. Stroscio, C. Balkas, and R.F. Davis, Materials Research Society Symposium Proceedings, Vol: 537 Read more...
288 Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure, L. Berman, D. Alexson, P. Murphy, and Robert J. Nemanich, Physical Review B - Condensed Matter and Material Physics, Vol: 59, 12977-12982 Read more...
289 Phonon dynamics and lifetimes of AlN and GaN crystallites, L. Bergman, D. Alexson, Robert J. Nemanich, M. Dutta, M.A. Stroscio, C. Balkas, and R.F. Davis, MRS Internet Journal of Nitride Semiconductor Research, Vol: 4 Read more... PDF (208.21 KB)
290 Reduction of the transition temperature of C54 TiSi 2 through a Ta interlayer, B. Jung, Y.D. Kim, H. Jeon, W. Yang, and Robert J. Nemanich, Journal of the Korean Physical Society, Vol: 35, 5769-5773 Read more...
291 Wet Chemical Processing of (0001)Si 6H‐SiC Hydrophobic and Hydrophilic Surfaces, Sean W. King, Robert F. Davis, and Robert J. Nemanich, Journal of the Electrochemical Society, Vol: 146 Read more... PDF (471.71 KB)
292 Piezoelectric measurements with atomic force microscopy, J.A. Christman, R.R. Woolcott Jr., A.I. Kingon, and Robert J. Nemanich, Applied Physics Letters, Vol: 73 Read more... PDF (337.19 KB)
293 X-ray photoelectron diffraction from (3x3) and (√3x√3)R30° (0001)Si 6H-SiC surfaces, S.W. King, C. Ronning, R.F. Davis, R.S. Busby, and Robert J. Nemanich, Journal of Applied Physics, Vol: 84, 6042-6048 Read more... PDF (507.4 KB)
294 Cleaning of AlN and GaN surfaces, S.W King, J.P. barnak, M.D. Bremser, K.M. Tracy, C. Ronning, R.F. Davis, and Robert J. Nemanich, Journal of Applied Physics, Vol: 84, 5248-5260 Read more... PDF (562.08 KB)
295 Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy, B.L. Ward, O.-H. Nam, J.D. Hartman, S.L. English, B.L. McCarson, R. Schlesser, Z. Sitar, R.F. Davis, and Robert J. Nemanich, Journal of Applied Physics, Vol: 84, 5238-5242 Read more... PDF (664.27 KB)
296 Structural and electronic properties of boron nitride thin films containing silicon, C. Ronning, A.D. Banks, B.L. McCarson, R. Schlesser, Z. Sitar, R.F. Davis, B.L. Ward, and Robert J. Nemanich, Journal of Applied Physics, Vol: 84, 5046-5051 Read more... PDF (446.31 KB)
297 Film thickness effects in the Co-Si1-Si1-xGex solid phase reaction, B.I. Boyanov, P.T. Goeller, D.E. Sayers, and Robert J. Nemanich, Journal of Applied Physics, Vol: 84, 4285-4291 Read more... PDF (677.84 KB)
298 Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction, S.W. King, C. Ronning, R.F. Davis, M.C. Benjamin, and Robert J. Nemanich, Journal of Applied Physics, Vol: 84, 2086-2090 Read more... PDF (424.97 KB)
299 Electron affinity of cubic boron nitride terminated with vanadium oxide, M. Park, W.B. Choi, R. Schlesser, A.T. Sowers, L. Bergman, Robert J. Nemanich, Z. Sitar, J.J. Hren, and J.J. Cuomo, Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 269-270 Read more...
300 Electron emission from etched diamond and its structural analysis, M Park, W.B. Choi, D.R. McGregor, L. Bergman, Robert J. Nemanich, J. J. Hren, and J.J. Cuomo, Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 271-272 Read more...