Electron emission from etched diamond and its structural analysis

Contributors:   M Park, W.B. Choi, D.R. McGregor, L. Bergman, Robert J. Nemanich, J. J. Hren, and J.J. Cuomo

ABSTRACT

Discontinuous diamond films were deposited on silicon by microwave plasma chemical vapor deposition (MPCVD). The diamond films were sharpened by argon ion etching. Field emission turn-on field was drastically lowered after sharpening. Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR) were used for structural characterization. Possible mechanisms of field emission from the etched field emitter are discussed.

Publisher: Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC,   271-272 ||  Published: 1998-07 ||   Read more...