Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001)
Contributors: J.D. Hartman K. Naniwae, C. Petrich, V. Ramachandran, R.M. Feenstra, Robert J. Nemanich, and R.F. Davis
ABSTRACT
The surface structures of both cleaned and etched 6H-SiC(0001)Si wafers have been investigated using the photo emission electron microscope (PEEM). In the first study, the SiC wafers were exposed to two different cleaning processes to obtain a (√3×√3)R30° and a 3×3 reconstructed surface. The PEEM images were obtained with a mercury arc lamp as the photon source and revealed that the clean reconstructed surfaces were non-uniform. In the second study, characterization of a hydrogen etched surface using the PEEM with the Duke University free electron laser (DFEL) as the photon source revealed a high density of dislocations and a stepped surface structure.