Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

Contributors:   S.W. King, R.F. Davis, C. Ronning, and Robert J. Nemanich

ABSTRACT

X-ray and UV photoelectron spectroscopies were used to measure the valence band discontinuity at the interface between (0001) 2H-GaN films and 3C-SiC (111) substrates. For GaN films grown by NH3 gas source molecular beam epitaxy on (1×1) 3C-SiC on-axis surfaces, a type I band alignment was observed with a valence band discontinuity of 0.5±0.1 eV. A type I band alignment was also determined for GaN films grown on (3×3) 3C-SiC, but with a larger valence band discontinuity of 0.8±0.1 eV.

Publisher: Journal of Electronic Materials,   Volume: 28,   L34-L37 ||  Published: 1999-12 ||   PDF (125.06 KB) ||   Read more...