Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

Contributors:   S.W. King, C. Ronning, R.F. Davis, M.C. Benjamin, and Robert J. Nemanich

ABSTRACT

X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory.

Publisher: Journal of Applied Physics,   Volume: 84,   2086-2090 ||  Published: 1998-08 ||   PDF (424.97 KB) ||   Read more...