Electrical properties of nanoscale tisi2 islands on si
Contributors: J. oh, H. Ham, P. Laloli, and Robert J. Nemanich
ABSTRACT
Nanoscale TISI2 islands are formed by election beam deposition of a few monolayers of titanium followed by in situ annealing at high temperatures (800-1000°C). The typical island sizes were -10 run. Electrical characteristics of these islands were probed using UHV-STM. I-V spectroscopies on these islands show single electron tunneling effects such as Coulomb blockade and Coulomb staircase at room temperature.
Publisher: Materials Research Society Symposium Proceedings,
Volume: 583,
111-116 ||
Published:
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