Cobalt silicide formation on 6H silicon carbide

Contributors:   A.O. Porto, B.I. Boyanov, D.E. Sayers, and Robert J. Nemanich

ABSTRACT

Cobalt films (1, 25 and 100 Å) have been directly deposited on top 6H-SiC(0001) wafers by molecular beam epitaxy and annealed at 500-8000C in UHV. The structure of the metal-semiconductor interface was investigated by XAFS. The results show that Co-Si bonds were preferentially formed in the 1 Å Co films. In the 25 and 100 Å Co films only Co-Co bonds were identified. The XRD pattern of the 100 Å Co film exhibits a Co (200) peak confirming the presence of unreacted metal even after annealing at 8000C.

Publisher: Journal of Synchrotron Radiation,   Volume: 6,   188-189 ||  Published: 1999-05 ||   PDF (217.42 KB) ||   Read more...