Growth of epitaxial CoSi2 on SiGe(001)

Contributors:   B.I. Boyanov, P.T. Goeller, D.E. Sayers, and Robert J. Nemanich

ABSTRACT

The effect of germanium on the growth of epitaxial CoSi2 films on SiGe(001) and the stability of the CoSi2-SiGe interface was investigated. The highest quality (001) oriented film were grown with a layered template structure consisting of 2 ML Si/1 ML Co/2ML Si deposited at room temperature on the SiGe(001) surface. The surface roughness of the films after annealing at 700 °C was comparable to Si(001) substrate. Attempts to deposit (001)-oriented CoSi2 films at Co-rich stoichiometry, either directly on the surface of SiGe(001) or on a layered template, resulted in growth of (221̄)-oriented islanded films or significant pitting of the silicide layer.

Publisher: Journal of Applied Physics,   Volume: 86,   1355-1362 ||  Published: 1999-08 ||   PDF (1.03 MB) ||   Read more...