Robert-Nemanich

Publications

ORCID
Sr. Title File Year
451 Raman Scattering Characterization of Titanium Silicide Formation, Robert J. Nemanich, R.W. Fiordalice, and H. Jeon, IEEE Journal of Quantum Electronics, Vol: 25 Read more...
452 Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates, T.P. Humphreys, C.J. Miner, J.B. Posthill, K. Das, M.K. Summerville, R.J. Nemanich, C.A. Sukow, N.R. Parikh, Applied Physics Letters, Vol: 54, 1687 Read more...
453 Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure, R.E. Shroder, J.T. Glass, and Robert J. Nemanich, SPIE - The International Society of Optical Engineering, Vol: 0969 Read more...
454 Raman scattering characterization of strain in gaas heteroepitaxial films grown on sapphire and silicon-on-sapphire substrates, T.P. Humphreys, J.B. Posthill, K. Das, C.A. Sukow, R.J. Nemanich, N.R. Parikh, and A. Majeed, Japanese Journal of Applied Physics, Vol: 28 Read more...
455 Raman analysis of the configurational disorder in AlxGa1-xN films, Robert J. Nemanich, J. T. Glass, G. Lucovsky, and R.E. Shroder, Journal of Vacuum Science and Technology A, Vol: 6, 1783 Read more...
456 Raman scattering for semiconductor interface analysis, Robert J. Nemanich, SPIE - The International Society of Optical Engineering, Vol: 0794 Read more...
457 Defects in single-crystal silicon induced by hydrogenation, N.M. Johnson, F.A. Ponce, R.A. Street, and Robert J. Nemanich, Physical Review B, Vol: 35, 4166 Read more...
458 Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling, W.B. Jackson, Robert J. Nemanich, M.J. Thompson, B. Wacker, Physical Review B, Vol: 33, 6936 Read more...
459 Reactions of thin-film titanium on silicon studied by Raman spectroscopy, Robert J. Nemanich, R.T. Fulks, B.L. Stafford, H.A. Vander Plas, Applied Physics Letters, Vol: 46, 670-672 Read more...
460 Thin Film Kinetics and Reactions at Metal-Silicon Interfaces, B.L. Stafford, J.R. Abelson, T.W. Sigmon, and Robert J. Nemanich, Proceedings of the 17th International Conference on the Physics of Semiconductors, 155-158 Read more... PDF (627.1 KB)
461 Initial reactions and silicide formation of titanium on silicon studied by Raman spectroscopy, R.T. Fulks, B.L. Stafford, H.A. Wander Plas, and Robert J. Nemanich, Journal of Vacuum Science and Technology A, Vol: 3, 938 Read more...
462 Electron-spin-resonance study of boron-doped amorphous SixGe1-x: H alloys, M. Stutzmann, J. Stuke, and Robert J. Nemanich, Physical Review B, Vol: 30, 3595 Read more...
463 Raman scattering from solid silicon at the melting temperature, Robert J. NemanichR, D.K. Biegelsen, R.A. Street, L.E. Fenell, Physical Review B, Vol: 29 Read more...
464 SOLID SILICON AT THE MELTING TEMPERATURE IS CRYSTALLINE., D.K. Biegelsen, L.E. Fennell, R.A. Street, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 23, 383-388 Read more...
465 INITIAL PHASE FORMATION AT THE INTERFACE OF Ni, Pd, OR Pt AND Si., Robert J. Nemanich, C.C. Tsai, B.L. Stafford, J.R. Abelson, T.W. Sigmon, Materials Research Society Symposium Proceedings, Vol: 24, 9-14 Read more...
466 Schottky Barriers on a-Si:H, Robert J. Nemanich, Semiconductors and Semimetals, Vol: 21, 375-406 Read more...
467 Interface kinetics at metal contacts on a-Si:H, Robert J. Nemanich, M.J. Thompson, W. B. Jackson, C.C. Tsai, and B.L. Stafford, Journal of Non-Crystalline Solids, Vol: 59-60, 513-516 Read more...
468 Low frequency Raman scattering in chalcogenide glasses, Robert J. Nemanich, Journal of Non-Crystalline Solids, Vol: 59-60, 851-854 Read more...
469 The absolute luminescence quantum efficiency in hydrogenated amorphous silicon, W.B. Jackson and Robert J. Nemanich, Journal of Non-Crystalline Solids, Vol: 59-60, 353-356 Read more...
470 Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling, M.J. Thompson, Robert J. Nemanich, C.C. Tsai, Surface Science, Vol: 132, 250-263 Read more...
471 Aligned, coexisting liquid and solid regions in laser-annealed Si, Robert J. Nemanich, D.k. Biegelsen, and W. G. Hawkins, Physical Review B, Vol: 27, 7817 Read more...
472 Energy dependence of the carrier mobility-lifetime product in hydrogenated amorphous silicon, Warren B. Jackson, Robert J. Nemanich, Nabil A. Amer, Physical Review B, Vol: 27, 4861 Read more...
473 Configurations of a chemically ordered continuous random network to describe the structure of GeSe2 glass, Robert J. Nemanich, F.L. Galeener, J.C. Mikkelsen Jr., G.A.N. Connell, George Etherington, A.C. Wright, and R.N. Sinclair, Physica B+C, Vol: 117-118, 959-961 Read more...
474 Raman scattering from hydrogenated amorphous silicon, S.A. Lyon and Robert J. Nemanich, Physica B+C, Vol: 117-118, 871-873 Read more...
475 METAL-INDUCED CRYSTALLIZATION OF HYDROGENATED AMORPHOUS FILMS., C.C. Tsai, Robert J. Nemanich, M.J. Thompson, B.L. Stafford, Physica B+C, Vol: 117-118, 953-955 Read more...
476 Metal-induced crystallization of hydrogenated amorphous Si films, C.C. Tsai, Robert J. Nemanich, M.J. Thompson, and B.L. Stafford, Physica B+C, Vol: 117-118, 953-955 Read more...
477 INITIAL REACTIONS AT THE INTERFACE OF Pt AND AMORPHOUS SILICON., Robert J. Nemanich, M.J. Thompson, W.B. Jackson, C.C. Tsai, and B.L. Stafford, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol: 1, 519-523 Read more...
478 Summary Abstract: Metal-amorphous Si interfaces: Structural and electrical properties, C.C. Tsai, M.J. Thompson, Robert J. Nemanich, W.B. Jackson, and B.L. Stafford, Journal of Vacuum Science and Technology A, Vol: 1, 785 Read more...
479 ALIGNED, COEXISTING LIQUID AND SOLID REGIONS IN PULSED AND CW LASER ANNEALING OF Si., Robert J. Nemanich, D.Kk. Biegelsen, W.G. Hawkins, Materials Research Society Symposium Proceedings, Vol: 13, 211-216 Read more...
480 Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon, W.B. Jackson, D.K. Biegelsen, Robert J. Nemanich, and J.C. Knights, Applied Physics Letters, Vol: 42, 105 Read more...
481 Surface topography of laser annealed silicon, D. Haneman and Robert J. Nemanich, Solid State Communications, Vol: 43, 203-206 Read more...
482 Light scattering study of boron nitride microcrystals, Robert J. Nemanich, S.A. Solin, and Richard M. Martin, Physical Review B, Vol: 23, 6348 Read more...
483 Light scattering from magnetic excitations in orthoferrites, R.M. White, Robert J. Nemanich, and Conyers Herring, Physical Review B, Vol: 25, 1822 Read more...
484 Interfacial Reactions Between AU and Hydrogenated Amorphoussi, C.C. Tsai, M.J. Thompson, and Robert J. Nemanich, Journal of Vacuum Science and Technology, Vol: 21, 632-636 Read more...
485 Electronic structure of CePd3 from resonant photoemission and optical reflectivity spectra, J.W. Allen, Robert J. Nemanich, S.-J. Oh, Journal of Applied Physics, Vol: 53, 2415 Read more...
486 Strain of laser annealed silicon surfaces, D. Haneman and Robert J. Nemanich, Applied Physics Letters, Vol: 40, 785 Read more...
487 CORRELATED ELECTRICAL AND MICROSTRUCTURAL STUDIES OF RECRYSTALLIZED SILICON THIN FILMS ON BULK GLASS SUBSTRATES, D.K. Biegelsen, N.M. Johnson, Robert J. Nemanich, M.D. Moyer, and L.E. Fennell, Materials Research Society Symposium Proceedings, Vol: 4, 331-336 Read more...
488 Lattice dynamics of the layered compounds InI and InBr, B.P. Clayman, Robert J. Nemanich, J.C. Mikkelsen Jr., G. Lucovsky, Physical Review B, Vol: 26, 2011-2015 Read more...
489 Microstrain in laser‐crystallized silicon islands on fused silica, S.A. Lyon, Robert J. Nemanich, N.M. Johnson, and D.K. Biegelsen, Applied Physics Letters, Vol: 40, 316 Read more...
490 Structure and growth of the interface of Pd on a-Si:H, C.C. Tsai, and T.W. SIgmon, and Robert J. Nemanich, Physical Review B, Vol: 23, 6828 Read more...
491 Silicide formation in Pd-a-Si:H Schottky barriers, M.J. Thompson, N.M. Johnson, Robert J. Nemanich, and C.C. Tsai, Applied Physics Letters, Vol: 39, 274 Read more...
492 RAMAN SPECTROSCOPIC EVALUATION OF SILICIDES FORMED WITH A SCANNED ELECTRON BEAM, Robert J. Nemanich, T.W. Sigmon, N.M. Johnson, M.D. Moyer, and S.S. Lau, Materials Research Society Symposium Proceedings, Vol: 1, 541-546 Read more...
493 Interference enhanced Raman scattering study of the interfacial reaction of Pd on a‐Si:H, Robert J. Nemanich, C.C. Tsai, M.J. Thompson, and T.W. Sigmon, Journal of Vacuum Science and Technology, Vol: 19, 685 Read more...
494 Interference-enhanced raman scattering of very thin titanium and titanium oxide films, Robert J. Nemanich, C.C. Tsai, G.A.N. Connell, Physical Review Letters, Vol: 44, 273-276 Read more...
495 Structural studies of amorphous semiconducting thin films using interference enhanced raman scattering, C.C. Tsai and Robert J. Nemanich, Journal of Non-Crystalline Solids, Vol: 35-36, 1203-1208 Read more...
496 Interference enhanced Raman scattering from very thin absorbing films, G.A. N. Connell, C.C. Tsai, and Robert J. Nemanich, Applied Physics Letters, Vol: 36, 31 Read more...
497 Structure and defects in the amorphous Si:As:H system, Robert J. Nemanich and J.C. Knights, Journal of Non-Crystalline Solids, Vol: 35-36, 243-248 Read more...
498 Light scattering from correlated ion fluctuations in ionic conductors, Robert J. Nemanich, R.M. Martin, J.C. Mikkelsen Jr. , Solid State Communications, Vol: 32, 79-82 Read more...
499 First- and second-order Raman scattering from finite-size crystals of graphite, Robert J. Nemanich and S.A. Solin, Physical Review B, Vol: 20 Read more...
500 Defects in plasma-deposited a-Si: H, J.C. Knights, G. Lucovsky, and Robert J. Nemanich, Journal of Non-Crystalline Solids, Vol: 32, 393-403 Read more...