Structure and growth of the interface of Pd on a-Si:H
Contributors: C.C. Tsai, and T.W. SIgmon, and Robert J. Nemanich
ABSTRACT
The structure of the Pd— a−Si:H interface is probed using interference-enhanced Raman scattering. It was found that ∼ 2 nm of Pd was initially consumed to form a crystalline silicide at the Pd — a−Si:H interface. Annealing to 300°C caused a spectroscopic change, which is associated with a structural change, and additional annealing at 500°C caused the formation of crystalline Si.