Structural studies of amorphous semiconducting thin films using interference enhanced raman scattering

Contributors:   C.C. Tsai and Robert J. Nemanich

ABSTRACT

A new technique, interference enhanced Raman scattering, is used to obtain the Raman spectra of very thin amorphous films (∼50-350Å) of elemental semiconductors with quite different atomic coordinations, which include As, B, Se and Si:H. These thin films show spectra which are essentially similar to the thick film or bulk sample counterparts, however, the scattering intensity is enhanced. The photo-induced oxidation in a-As and the hydrogen evolution due to annealing in a-Si:H are investigated by using the interference enhanced Raman scattering technique.

Publisher: Journal of Non-Crystalline Solids,   Volume: 35-36,   1203-1208 ||  Published: 1980-01 ||   Read more...