Contributors: Robert J. Nemanich, M.J. Thompson, W. B. Jackson, C.C. Tsai, and B.L. Stafford
ABSTRACT
The structural interactions at the interface of Cr, Ni, Pd on doped and undoped a-Si:H are measured using interference enhanced Raman scattering. The electrical properties of the barriers are probed by J-V and internal photoemission. After atomic interactions occur the J-V characteristics become nearly ideal while the internal photoemission signal increases but shows no change in barrier height.