Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling
Contributors: M.J. Thompson, Robert J. Nemanich, C.C. Tsai
ABSTRACT
The electrical properties of metal-a-Si:H contacts will be discussed. The relationship between the Schottky barrier contacts and the structural properties of the interface is reviewed. Polycrystalline silicides form at the interface of Pd and Pt on a-Si:H; the formation of the silicides is accompanied by only small changes in the Schottky barrier height. Au and Al cause crystallization of a-Si:H when annealed to 250°C. The crystallization with Au contacts creates very little change in the electrical properties of the interface; however, the Al Schottky barriers become near ohmic when crystalline Si is formed.