Thin Film Kinetics and Reactions at Metal-Silicon Interfaces

Contributors:   B.L. Stafford, J.R. Abelson, T.W. Sigmon, and Robert J. Nemanich

ABSTRACT

Raman scattering and RBS measurements are used to characterize the initial interactions at metal-Si interfaces. The results indicate that for some metals, a disordered intermixed layer can precede the formation of an ordered silicide. The results are discussed in terms of the chemical energy and strain which result from the interdiffusion.

Publisher: Proceedings of the 17th International Conference on the Physics of Semiconductors,   155-158 ||  Published: 1985-01 ||   PDF (627.1 KB) ||   Read more...