Metal-induced crystallization of hydrogenated amorphous Si films
Contributors: C.C. Tsai, Robert J. Nemanich, M.J. Thompson, and B.L. Stafford
ABSTRACT
Metals films of Au, Al and Pd deposited on hydrogenated amorphous Si cause the formation of crystalline Si at temperatures well below its normal crystallization temperature of >650°C. The structural aspects are explored by SEM, TEM, scanning Auger microprobe (SAM), and interference enhanced Raman scattering (IERS). The structural changes are correlated with changes of the current voltage characteristics of the resulting Schottky barriers.