Robert-Nemanich

Publications

ORCID
Sr. Title File Year
351 Negative electron affinity surfaces of aluminum nitride and diamond, Robert J. Nemanich, P.K. Baumann, M.C. Benjamin, S.W. King, J. Van der Weide, R.F. Davis, Diamond and Related Materials, Vol: 5, 790-796 Read more... PDF (735.39 KB)
352 Cleaning of GaN surfaces, L.L. Smith, S.W. King, R.F. Davis, and Robert J. Nemanich, Journal of Electronic Materials, Vol: 25, 805-810 Read more... PDF (481.71 KB)
353 Characterization of zirconium-diamond interfaces, P.K. Baumann, S.P. Bozeman, B.L. Ward, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 423, 143-148 Read more... PDF (1.55 MB)
354 Investigation of an NEA diamond vacuum microtriode array, C.W. Hatfield, G.L. Bilbro, A.S. Morris, P.K. Baumann, B.L. Ward, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 423, 33-38 Read more... PDF (1.73 MB)
355 Ex situ and in situ methods for complete oxygen and non-carbidic carbon removal from (0001)Si 6H-SiC surfaces, Sean W. King, Mark C. Benjamin, Richard S. Kern, Robert J. Nemanich, and Robert F. Davis, Materials Research Society Symposium Proceedings, Vol: 423, 563-568 Read more... PDF (1.43 MB)
356 Ex situ and in situ methods for oxide and carbon removal from AlN and GaN surfaces, S.W. King, L.L. Smith, J.P. Barnak, J.-H. Ku, J.A. Christman, M.C. Benjamin, M. D. Bremser, Robert J. Nemanich, and R.F. Davis, Materials Research Society Symposium Proceedings, Vol: 395, 739-744 Read more...
357 Titanium germanosilicide phase formation during the Ti-Si1-xGex solid phase reactions, D.B. Aldrich, Y.L. Chen, D.E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 402, 405-410 Read more...
358 (Negative) electron affinity of AlN and AlGaN alloys, Robert J. Nemanich, M.C. Benjamin, S.P. bozeman, M.D. Bremser, S.W. King, B.L. Ward, R.F. Davis, B. Chen, Z. Zhang, and J. Bernholc, Materials Research Society Symposium Proceedings, Vol: 395, 777-778 Read more...
359 Epitaxial films of cobalt disilicide (100) evaporated onto Si(100) from a mixed source, P.T. Goeller, Z. Wang, D.E. Sayers, J.T. Glass, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 402, 511-516 Read more...
360 UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC, M.C. Benjamin, M.D. Bremser, T.W. Weeks Jr., S.W. King, R.F. Davis, and Robert J. Nemanich, Applied Surface Science, Vol: 104/105, 455-460 Read more... PDF (419.37 KB)
361 Interface stability of Ti(Si1-yGey)2 and Si1-xGex alloys, D.B. Aldrich, F.M. D'Heurle, D.E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 402, 21-26 Read more...
362 Negative electron affinity effects and Schottky barrier height measurements of metals on diamond (100) surfaces, P.K. Baumann and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 416, 157-162 Read more...
363 Raman spectroscopy for characterization of hard, wide-bandgap semiconductors: Diamond, GaN, GaA1N, A1N, BN, L. Bergman and Robert J. Nemanich, Annual Review of Materials Science, Vol: 26, 551-579 Read more... PDF (1.28 MB)
364 The Schottky barrier of Co on strained and unstrained SixGe1−x alloys, Ja-Hum Ku and Robert J. Nemanich, Applied Surface Science, Vol: 104/105, 262-266 Read more... PDF (374.25 KB)
365 XPS measurement of the SiC/AlN band-offset at the (0001) interface, S.W. King, M.C. Benjamin, Robert J. Nemanich, R.F. Davis, and W.R.L. Lambrecht, Materials Research Society Symposium Proceedings, Vol: 395, 375-380 Read more...
366 Characterization of zirconium germanosilicide formed by solid state reaction of Zr with Si1-xGex alloys, Z. Wang, D.B. Aldrich, P. Goeller, Robert J. Nemanich, and D.E. Sayers, Materials Research Society Symposium Proceedings, Vol: 402, 387-392 Read more...
367 Silicide formation and stability of , Zhihai Wang, D.B. Aldrich, Y.L. Chen, D.E. Sayers, and Robert J. Nemanich, Thin Solid Films, Vol: 270, 555-560 Read more... PDF (784.59 KB)
368 Morphology and stability of (Ti0.9Zr0.1) Si2 thin films on Si(111) and Si(100) formed in UHV, Y. Dao, D.E. Sayers, and Robert J. Nemanich, Thin Solid Films, Vol: 270, 544-548 Read more... PDF (678.28 KB)
369 Effect of composition on phase formation and morphology in Ti–Si1−xGex solid phase reactions, D.B. Aldrich, Y.L. Chen, D.E. Sayers, Robert J. Nemanich, S.P. Ashburn, and M.C. Ozturk, Journal of Materials Research, Vol: 10, 2849-2863 Read more... PDF (2.95 MB)
370 Observation of a negative electron affinity for boron nitride, M.J. Powers, M.C. Benjamin, L.M. Porter, Robert J. Nemanich, R.F. Davis, J.J. Cuomo, G.L. Doll, and S.J. Harris, Applied Physics Letters, Vol: 67 Read more... PDF (501.25 KB)
371 Film thickness effects in the Ti–Si1−xGex solid phase reaction, D.B. Aldrich, H.L. Heck, Y.L. Chen, D.E. Sayers, and Robert J. Nemanich, Journal of Applied Physics, Vol: 78 Read more... PDF (1.6 MB)
372 Raman and photoluminescence analysis of stress state and impurity distribution in diamond thin films, L. Bergman and Robert J. Nemanich, Journal of Applied Physics, Vol: 78 Read more... PDF (1.78 MB)
373 Surface Characterization, G. E. McGuire, Max L. Swanson, Nalin R. Parikh, Steve. Simko, P. S. Weiss, J. H. Ferris, R. J. Nemanich, D. R. Chopra, and A. R. Chourasia, Analytical Chemistry, Vol: 67, 199-200 Read more... PDF (3.29 MB)
374 Negative electron affinity effects on H plasma exposed diamond (100) surfaces, P.K. Baumann and Robert J. Nemanich, Diamond and Related Materials, Vol: 4, 802-805 Read more... PDF (445.22 KB)
375 Removal of SiO2 from Si (100) by remote H2/SiH4 plasma prior to epitaxial growth, J.P. Barnak, H. Ying, Y.L. Chen, J. Montgomery, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 386, 351-356 Read more... PDF (1.16 MB)
376 Correlation of roughness and device properties for hydrogen plasma cleaning of Si(100) prior to gate oxidation, J.S. Montgomery, J.P. Barnak, C. Silvestre, J.R. Hauser, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 386, 279-284 Read more... PDF (418.16 KB)
377 RIE passivation layer removal by remote H-plasma and H2/SiH4 plasma processing, Ying Hong, J.P. barnak, Y.L. Chen, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 386, 285-290 Read more... PDF (1.89 MB)
378 Removal of fluorine from a Si (100) surface by a remote RF hydrogen plasma, J.P. Barnak, S. King, J. Montgomery, Ja-Hum Ku, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 386, 357-362 Read more... PDF (1.78 MB)
379 Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth, D.A> tucker, D.-K. Seo, M.-H. Whangbo, F.R. Sivazlian, B.R. Stoner, S.P. Bozeman, A.T. Sowers, J.T. Glass, and Robert J. Nemanich, Surface Science, Vol: 334, 179-194 Read more... PDF (2.53 MB)
380 EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys, Z. Wang, D.E. Sayers and Robert J. Nemanich, Physica B, Vol: 208/209, 567-568 Read more... PDF (138.03 KB)
381 Local structural studies of (Ti1−xZrx)Si2 thin films on Si(111), Y. Dao, A.M. Edwards, D.E. Sayers, and Robert J. Nemanich, Physica B, Vol: 208 & 209, 513-514 Read more... PDF (132.82 KB)
382 The structure and property characteristics of amorphous/nanocrystalline silicon produced by ball milling, T.D. Shen, C.C. Koch, T.L. McCormick, Robert J. Nemanich, J.Y. Huang, and J.G. Huang, Journal of Materials Research, Vol: 10, 139-148 Read more... PDF (3.29 MB)
383 Stability of C54 titanium germanosilicide on a silicon-germanium alloy substrate, D.B. Aldrich, Y.L. Chen, D.E. Sayers Robert J. Nemanich, S.P. Ashburn, M.C. Ozturk, Journal of Applied Physics, Vol: 77, 5107-5114 Read more... PDF (1.51 MB)
384 Determination of excess phosphorus in low-temperature GaP grown by gas source molecular beam epitaxy, Y. He, N.A. el-Masry, J. Ramdani, S.M. Bedair, T.L. McCormick, E.R. Weber, and Robert J. Nemanich, Applied Physics Letters, Vol: 65 Read more... PDF (663.37 KB)
385 Bond-length relaxation in Si 1 − x Ge x alloys, D.B. Aldrich, D.E. Sayers, and Robert J. Nemanich, Physical Review B, Vol: 50 Read more... PDF (390.75 KB)
386 Structural and electrical properties of (Ti0.9Zr0.1)Si2 thin films on Si(111), Y. Dao, A.M. Edwards, H. Ying, Y.L. Chen, D.E. Sayers, and Robert J. Nemanich, Applied Physics Letters, Vol: 65, 2413 Read more... PDF (436.5 KB)
387 Negative-electron-affinity effects on the diamond (100) surface, J. van der Weide, Z. Zhang, P.K. Baumann, M.G. Wensell, J. Bernholc, and Robert J. Nemanich, Physical Review B, Vol: 50 Read more... PDF (173.63 KB)
388 Structural investigation of the initial interface region formed by thin zirconium films on silicon (111), A.M. Edwards, Y. Dao, D.E. Sayers, K.M. Kemmer, and Robert J. Nemanich, Journal of Applied Physics, Vol: 76, 4630 Read more... PDF (1 MB)
389 The origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films, L. Bergman, M.T. McClure, J.T. Glass, and Robert J. Nemanich, Journal of Applied Physics, Vol: 76, 3020 Read more... PDF (1.3 MB)
390 Influence of interfacial hydrogen and oxygen on the Schottky barrier height of nickel on (111) and (100) diamond surfaces, , and Robert J. Nemanich, Physical Review B, Vol: 49 Read more... PDF (596.62 KB)
391 Morphology of TiSi2 and ZrSi2 on Si(100) and (111) surfaces, C.A. Sukow and Robert J. Nemanich, Journal of Materials Research, Vol: 9, 1214-1227 Read more... PDF (3.11 MB)
392 Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001), M.C. Benjamin, Cheng Wan, R.F. Davis, and Robert J. Nemanich, Applied Physics Letters, Vol: 64 Read more... PDF (664.58 KB)
393 Comparison of surface cleaning processes for diamond C(001), P.K. Baumann, T.P. Humphreys, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 339, 69-74 Read more... PDF (1.16 MB)
394 Recombination processes of the broadband and 1.681 eV optical centers in diamond films, L. Bergman, M.T. McClure, J.T. Glass, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 339, 663-668 Read more... PDF (450.18 KB)
395 Properties of the heteroepitaxial AlN/SiC interface, M.C. Benjamin, C. Wang, R.S. Kern, R.F. Davis, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 339, 81-88 Read more...
396 Strain and impurity content of synthetic diamond crystals, T.L. McCormick, W.E. Jackson, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 349, 445-450 Read more... PDF (716.34 KB)
397 Epitaxial Cu contacts on semiconducting diamond, P.K. Baumann, T.P. Humphreys, Robert J. Nemanich, K. Ishibashi, N.R. Parikh, L.M. Porter, and R.F. Davis, Diamond and Related Materials, Vol: 3, 883-886 Read more... PDF (453.53 KB)
398 Highly oriented diamond films on Si: growth, characterization, and devices, B.R. Stoner, D.M. Malta, A.J. Tessmer, J. Holmes, D.L. Dreifus, R.C. Glass, A. Sowers, and Robert J. Nemanich, Proceedings of SPIE - the International Society for Optical Engineering, Vol: 2151, 2-13 Read more...
399 In Situ Remote H‐Plasma Cleaning of Patterned Si ‐ SiO2 Surfaces, R.J. Carter, T.P. Schneider, J.S. Montgomery, and Robert J. Nemanich, Journal of the Electrochemical Society, Vol: 141 Read more... PDF (1.16 MB)
400 Morphology of Si(100) surfaces exposed to a remote H plasma, J.S. Montgomery, T.P. Schneider, R.J. Carter, J.P. Barnak, Y.L. Chen, J.R. Hauser, and Robert J. Nemanich, Applied Physics Letters, Vol: 67, 2194 Read more... PDF (479.48 KB)