Highly oriented diamond films on Si: growth, characterization, and devices

Contributors:   B.R. Stoner, D.M. Malta, A.J. Tessmer, J. Holmes, D.L. Dreifus, R.C. Glass, A. Sowers, and Robert J. Nemanich

ABSTRACT

Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to obtain smooth films consisting of epitaxial grains with only low-angle grain boundaries. Boron-doped layers were selectively deposited onto the surface of these oriented films and temperature-dependent Hall effect measurements indicated a 3 to 5 times improvement in hole mobility over polycrystalline films grown under similar conditions. Room temperature hole mobilities between 135 and 278 cm2/V-s were measured for the highly oriented samples as compared to 2 to 50 cm2/V-s for typical polycrystalline films. Grain size effects and a comparison between the transport properties of polycrystalline, highly oriented and homoepitaxial films will be discussed. Metal-oxide- semiconductor field-effect transistors were then fabricated on the highly oriented films and exhibited saturation and pinch-off of the channel current.

Publisher: Proceedings of SPIE - the International Society for Optical Engineering,   Volume: 2151,   2-13 ||  Published: 1994-01 ||   Read more...