Characterization of zirconium germanosilicide formed by solid state reaction of Zr with Si1-xGex alloys

Contributors:   Z. Wang, D.B. Aldrich, P. Goeller, Robert J. Nemanich, and D.E. Sayers

ABSTRACT

We have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Si1-xGex solid state reaction. Thin films of C49 Zr(Si1-yGey)2 were formed from the solid phase reaction of Zr and Si1-xGex bilayer structures. It was observed that Zr reacts uniformly with the Si1-xGex alloy and that C49 Zr(Si1-xGex)2 is the final phase of the Zr-Si1-xGex solid phase reaction (such that y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si1-xGex)2 thin films were higher than the sheet resistance measured for ZrSi2 films. The stability of Zr(Si1-xGex)2 in contact with Si1-xGex was investigated and no germanium segregation was detected in the Zr(Si1-xGex)2/Si1-xGex structures.

Publisher: Materials Research Society Symposium Proceedings,   Volume: 402,   387-392 ||  Published: 1996-01 ||   Read more...