Properties of the heteroepitaxial AlN/SiC interface

Contributors:   M.C. Benjamin, C. Wang, R.S. Kern, R.F. Davis, and Robert J. Nemanich

ABSTRACT

This study presents the results of surface investigation of the heteroepitaxial AlN/SiC interface. The analytical tools employed included UPS, XPS, Auger spectroscopy, and LEED. The surface electronic states were characterized by uv photoemission obtained at surface normal. Conclusions drawn from this study are that the AlN/SiC structure results in a negative electron affinity surface which is extremely sensitive to defect density. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.

Publisher: Materials Research Society Symposium Proceedings,   Volume: 339,   81-88 ||  Published: 1994-04 ||   Read more...