Negative electron affinity effects and Schottky barrier height measurements of metals on diamond (100) surfaces

Contributors:   P.K. Baumann and Robert J. Nemanich

ABSTRACT

In this study copper and cobalt films have been deposited on natural type IIb single crystal semiconducting diamond (100) surfaces in ultra-high vacuum (UHV). Prior to metal deposition the diamond crystals have been cleaned by a 1150°C anneal in UHV. This treatment resulted in positive electron affinity surfaces. Upon deposition of 2angstrom of Cu or Co a negative electron affinity (NEA) was observed. Schottky barrier heights of 0.70 eV and 0.35 eV were found for Cu and Co respectively. In-situ Auger electron spectroscopy (AES) was employed to confirm the presence of a metal layer.

Publisher: Materials Research Society Symposium Proceedings,   Volume: 416,   157-162 ||  Published: 1996-01 ||   Read more...