Characterization of zirconium-diamond interfaces

Contributors:   P.K. Baumann, S.P. Bozeman, B.L. Ward, and Robert J. Nemanich

ABSTRACT

Thin Zr films were deposited on natural single crystal diamond (100) substrates by e-beam evaporation in ultra-high vacuum (UHV). Before metal deposition the surfaces were cleaned by UHV anneals at either 500 °C or 1150 °C. Following either one of these treatments a positive electron affinity was determined by means of UV photoemission spectroscopy (UPS). Depositing 2 angstroms of Zr induced a NEA on both surfaces. Field emission current - voltage measurements resulted in a threshold field (for a current of 0.1 μA) of 79 V/μm for positive electron affinity diamond surfaces and values as low as 20 V/μm for Zr on diamond.

Publisher: Materials Research Society Symposium Proceedings,   Volume: 423,   143-148 ||  Published: 1996-04 ||   PDF (1.55 MB) ||   Read more...