351
Electron emission measurements from CVD diamond surfaces , S.P. Bozeman, P.K. Baumann, B.L. Ward, M.J. Powers, J.J. Cuomo, D.L. Dreifus, and Robert J. Nemanich, Diamond and Related Materials, Vol: 5, 802-806
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(493.39 KB)
1996
352
Negative electron affinity surfaces of aluminum nitride and diamond , Robert J. Nemanich, P.K. Baumann, M.C. Benjamin, S.W. King, J. Van der Weide, R.F. Davis, Diamond and Related Materials, Vol: 5, 790-796
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(735.39 KB)
1996
353
Ex situ and in situ methods for complete oxygen and non-carbidic carbon removal from (0001)Si 6H-SiC surfaces , Sean W. King, Mark C. Benjamin, Richard S. Kern, Robert J. Nemanich, and Robert F. Davis, Materials Research Society Symposium Proceedings, Vol: 423, 563-568
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PDF
(1.43 MB)
1996
354
Characterization of zirconium-diamond interfaces , P.K. Baumann, S.P. Bozeman, B.L. Ward, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 423, 143-148
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PDF
(1.55 MB)
1996
355
Investigation of an NEA diamond vacuum microtriode array , C.W. Hatfield, G.L. Bilbro, A.S. Morris, P.K. Baumann, B.L. Ward, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 423, 33-38
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PDF
(1.73 MB)
1996
356
UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC , M.C. Benjamin, M.D. Bremser, T.W. Weeks Jr., S.W. King, R.F. Davis, and Robert J. Nemanich, Applied Surface Science, Vol: 104/105, 455-460
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PDF
(419.37 KB)
1996
357
Interface stability of Ti(Si1-yGey)2 and Si1-xGex alloys , D.B. Aldrich, F.M. D'Heurle, D.E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 402, 21-26
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1996
358
Negative electron affinity effects and Schottky barrier height measurements of metals on diamond (100) surfaces , P.K. Baumann and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 416, 157-162
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1996
359
Raman spectroscopy for characterization of hard, wide-bandgap semiconductors: Diamond, GaN, GaA1N, A1N, BN , L. Bergman and Robert J. Nemanich, Annual Review of Materials Science, Vol: 26, 551-579
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(1.28 MB)
1996
360
The Schottky barrier of Co on strained and unstrained SixGe1−x alloys , Ja-Hum Ku and Robert J. Nemanich, Applied Surface Science, Vol: 104/105, 262-266
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(374.25 KB)
1996
361
XPS measurement of the SiC/AlN band-offset at the (0001) interface , S.W. King, M.C. Benjamin, Robert J. Nemanich, R.F. Davis, and W.R.L. Lambrecht, Materials Research Society Symposium Proceedings, Vol: 395, 375-380
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1996
362
Characterization of zirconium germanosilicide formed by solid state reaction of Zr with Si1-xGex alloys , Z. Wang, D.B. Aldrich, P. Goeller, Robert J. Nemanich, and D.E. Sayers, Materials Research Society Symposium Proceedings, Vol: 402, 387-392
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1996
363
Ex situ and in situ methods for oxide and carbon removal from AlN and GaN surfaces , S.W. King, L.L. Smith, J.P. Barnak, J.-H. Ku, J.A. Christman, M.C. Benjamin, M. D. Bremser, Robert J. Nemanich, and R.F. Davis, Materials Research Society Symposium Proceedings, Vol: 395, 739-744
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1996
364
Titanium germanosilicide phase formation during the Ti-Si1-xGex solid phase reactions , D.B. Aldrich, Y.L. Chen, D.E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 402, 405-410
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1996
365
(Negative) electron affinity of AlN and AlGaN alloys , Robert J. Nemanich, M.C. Benjamin, S.P. bozeman, M.D. Bremser, S.W. King, B.L. Ward, R.F. Davis, B. Chen, Z. Zhang, and J. Bernholc, Materials Research Society Symposium Proceedings, Vol: 395, 777-778
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1996
366
Epitaxial films of cobalt disilicide (100) evaporated onto Si(100) from a mixed source , P.T. Goeller, Z. Wang, D.E. Sayers, J.T. Glass, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 402, 511-516
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1996
367
Silicide formation and stability of , Zhihai Wang, D.B. Aldrich, Y.L. Chen, D.E. Sayers, and Robert J. Nemanich, Thin Solid Films, Vol: 270, 555-560
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(784.59 KB)
1995
368
Morphology and stability of (Ti0.9Zr0.1) Si2 thin films on Si(111) and Si(100) formed in UHV , Y. Dao, D.E. Sayers, and Robert J. Nemanich, Thin Solid Films, Vol: 270, 544-548
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(678.28 KB)
1995
369
Effect of composition on phase formation and morphology in Ti–Si1−xGex solid phase reactions , D.B. Aldrich, Y.L. Chen, D.E. Sayers, Robert J. Nemanich, S.P. Ashburn, and M.C. Ozturk, Journal of Materials Research, Vol: 10, 2849-2863
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(2.95 MB)
1995
370
Observation of a negative electron affinity for boron nitride , M.J. Powers, M.C. Benjamin, L.M. Porter, Robert J. Nemanich, R.F. Davis, J.J. Cuomo, G.L. Doll, and S.J. Harris, Applied Physics Letters, Vol: 67
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(501.25 KB)
1995
371
Film thickness effects in the Ti–Si1−xGex solid phase reaction , D.B. Aldrich, H.L. Heck, Y.L. Chen, D.E. Sayers, and Robert J. Nemanich, Journal of Applied Physics, Vol: 78
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PDF
(1.6 MB)
1995
372
Raman and photoluminescence analysis of stress state and impurity distribution in diamond thin films , L. Bergman and Robert J. Nemanich, Journal of Applied Physics, Vol: 78
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PDF
(1.78 MB)
1995
373
Surface Characterization , G. E. McGuire, Max L. Swanson, Nalin R. Parikh, Steve. Simko, P. S. Weiss, J. H. Ferris, R. J. Nemanich, D. R. Chopra, and A. R. Chourasia, Analytical Chemistry, Vol: 67, 199-200
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PDF
(3.29 MB)
1995
374
Negative electron affinity effects on H plasma exposed diamond (100) surfaces , P.K. Baumann and Robert J. Nemanich, Diamond and Related Materials, Vol: 4, 802-805
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PDF
(445.22 KB)
1995
375
Correlation of roughness and device properties for hydrogen plasma cleaning of Si(100) prior to gate oxidation , J.S. Montgomery, J.P. Barnak, C. Silvestre, J.R. Hauser, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 386, 279-284
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(418.16 KB)
1995
376
RIE passivation layer removal by remote H-plasma and H2/SiH4 plasma processing , Ying Hong, J.P. barnak, Y.L. Chen, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 386, 285-290
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PDF
(1.89 MB)
1995
377
Removal of fluorine from a Si (100) surface by a remote RF hydrogen plasma , J.P. Barnak, S. King, J. Montgomery, Ja-Hum Ku, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 386, 357-362
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PDF
(1.78 MB)
1995
378
Removal of SiO2 from Si (100) by remote H2/SiH4 plasma prior to epitaxial growth , J.P. Barnak, H. Ying, Y.L. Chen, J. Montgomery, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 386, 351-356
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PDF
(1.16 MB)
1995
379
Comparison of silicon, nickel, and nickel silicide (Ni3Si) as substrates for epitaxial diamond growth , D.A> tucker, D.-K. Seo, M.-H. Whangbo, F.R. Sivazlian, B.R. Stoner, S.P. Bozeman, A.T. Sowers, J.T. Glass, and Robert J. Nemanich, Surface Science, Vol: 334, 179-194
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(2.53 MB)
1995
380
Local structural studies of (Ti1−xZrx)Si2 thin films on Si(111) , Y. Dao, A.M. Edwards, D.E. Sayers, and Robert J. Nemanich, Physica B, Vol: 208 & 209, 513-514
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(132.82 KB)
1995
381
EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys , Z. Wang, D.E. Sayers and Robert J. Nemanich, Physica B, Vol: 208/209, 567-568
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(138.03 KB)
1995
382
The structure and property characteristics of amorphous/nanocrystalline silicon produced by ball milling , T.D. Shen, C.C. Koch, T.L. McCormick, Robert J. Nemanich, J.Y. Huang, and J.G. Huang, Journal of Materials Research, Vol: 10, 139-148
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(3.29 MB)
1995
383
Stability of C54 titanium germanosilicide on a silicon-germanium alloy substrate , D.B. Aldrich, Y.L. Chen, D.E. Sayers Robert J. Nemanich, S.P. Ashburn, M.C. Ozturk, Journal of Applied Physics, Vol: 77, 5107-5114
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PDF
(1.51 MB)
1995
384
Determination of excess phosphorus in low-temperature GaP grown by gas source molecular beam epitaxy , Y. He, N.A. el-Masry, J. Ramdani, S.M. Bedair, T.L. McCormick, E.R. Weber, and Robert J. Nemanich, Applied Physics Letters, Vol: 65
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PDF
(663.37 KB)
1994
385
Bond-length relaxation in Si 1 − x Ge x alloys , D.B. Aldrich, D.E. Sayers, and Robert J. Nemanich, Physical Review B, Vol: 50
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(390.75 KB)
1994
386
Structural and electrical properties of (Ti0.9Zr0.1)Si2 thin films on Si(111) , Y. Dao, A.M. Edwards, H. Ying, Y.L. Chen, D.E. Sayers, and Robert J. Nemanich, Applied Physics Letters, Vol: 65, 2413
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PDF
(436.5 KB)
1994
387
Negative-electron-affinity effects on the diamond (100) surface , J. van der Weide, Z. Zhang, P.K. Baumann, M.G. Wensell, J. Bernholc, and Robert J. Nemanich, Physical Review B, Vol: 50
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PDF
(173.63 KB)
1994
388
Structural investigation of the initial interface region formed by thin zirconium films on silicon (111) , A.M. Edwards, Y. Dao, D.E. Sayers, K.M. Kemmer, and Robert J. Nemanich, Journal of Applied Physics, Vol: 76, 4630
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PDF
(1 MB)
1994
389
The origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films , L. Bergman, M.T. McClure, J.T. Glass, and Robert J. Nemanich, Journal of Applied Physics, Vol: 76, 3020
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PDF
(1.3 MB)
1994
390
Influence of interfacial hydrogen and oxygen on the Schottky barrier height of nickel on (111) and (100) diamond surfaces , , and Robert J. Nemanich, Physical Review B, Vol: 49
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(596.62 KB)
1994
391
Morphology of TiSi2 and ZrSi2 on Si(100) and (111) surfaces , C.A. Sukow and Robert J. Nemanich, Journal of Materials Research, Vol: 9, 1214-1227
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(3.11 MB)
1994
392
Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001) , M.C. Benjamin, Cheng Wan, R.F. Davis, and Robert J. Nemanich, Applied Physics Letters, Vol: 64
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(664.58 KB)
1994
393
Comparison of surface cleaning processes for diamond C(001) , P.K. Baumann, T.P. Humphreys, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 339, 69-74
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PDF
(1.16 MB)
1994
394
Recombination processes of the broadband and 1.681 eV optical centers in diamond films , L. Bergman, M.T. McClure, J.T. Glass, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 339, 663-668
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(450.18 KB)
1994
395
Properties of the heteroepitaxial AlN/SiC interface , M.C. Benjamin, C. Wang, R.S. Kern, R.F. Davis, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 339, 81-88
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1994
396
Strain and impurity content of synthetic diamond crystals , T.L. McCormick, W.E. Jackson, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 349, 445-450
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(716.34 KB)
1994
397
Epitaxial Cu contacts on semiconducting diamond , P.K. Baumann, T.P. Humphreys, Robert J. Nemanich, K. Ishibashi, N.R. Parikh, L.M. Porter, and R.F. Davis, Diamond and Related Materials, Vol: 3, 883-886
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(453.53 KB)
1994
398
Highly oriented diamond films on Si: growth, characterization, and devices , B.R. Stoner, D.M. Malta, A.J. Tessmer, J. Holmes, D.L. Dreifus, R.C. Glass, A. Sowers, and Robert J. Nemanich, Proceedings of SPIE - the International Society for Optical Engineering, Vol: 2151, 2-13
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1994
399
Phase formations in Co/Si, Co/Ge, and Co/Si1-xGex by solid phase reactions , Z. Wang, Y.l. Chen, H. Ying, D.E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 320, 397-402
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1994
400
Local structural studies of TiSi2 and ZrSi2 thin films on Si(111) surfaces , Y. Dao, A.M. Edwards, D.E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 320, 367-372
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1994