Robert-Nemanich

Publications

ORCID
Sr. Title File Year
201 Band offset measurements of the Si3N4/GaN (0001) interface, T.E. Cook Jr., C.C. Fulton, W.J. Mecouch, R.F. Davis, G. Lucovsky, and Robert J. Nemanich, Journal of Applied Physics, Vol: 94 Read more... PDF (387.58 KB)
202 Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001), K.M. Tracey, W.J. Mecouch, R.F. Davis, and Robert J. Nemanich, Journal of Applied Physics, Vol: 94 Read more... PDF (565.69 KB)
203 Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors, A. Gruverman, B.J. Rodriguez, A.I. Kingon, Robert J. Nemanich, A.K. Tagantsev, J.S. Cross, and M. Tsukada, Applied Physics Letters, Vol: 83 Read more... PDF (633.39 KB)
204 Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures, M. Park, J.J. Cuomo, B.J. Rodriguez, W.-C. Yang, Robert J. Nemanich, and O. Ambacher, Journal of Applied Physics, Vol: 93 Read more... PDF (535.83 KB)
205 Electronic structure of transition metal high-k dielectrics: Interfacial band offset energies for microelectronic devices, Gerald Lucovsky, Gilbert B. Rayner Jr. Yu Zhang, Charles C. Fulton, Robert J. Nemanich, Guenther Appel, Harald Ade, and Jerry L. Whitten, Applied Surface Science Read more... PDF (180.14 KB)
206 Attractive migration and coalescence: A significant process in the coarsening of TiSi<inf>2</inf> islands on the Si(111) surface, W.-C. Yang, M. Zeman, H. Ade, and Robert J. Nemanich, Physical Review Letters, Vol: 90 Read more...
207 Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation, M. Park, V. Sakhrani, J.-P. Maria, J.J. Cuomo, C.W. Teng, J.F. Muth, M.E. Ware, B.J. Rodriguez, and Robert J. Nemanich, Journal of Materials Research, Vol: 18, 768-771 Read more... PDF (124.83 KB)
208 Ohmic Contacts to GaN, Phillip J. Hartlieb, Robert F. Davis, and Robert J. Nemanich, Nitride Semiconductors: Handbook on Materials and Devices Read more...
209 Influence of strain, surface diffusion and Ostwald ripening on the evolution of nanostructures for erbium on Si(001), Lena Fitting, M.C. Zeman, W.-C. Yang, and Robert J. Nemanich, Journal of Applied Physics, Vol: 93 Read more... PDF (563.5 KB)
210 Measurement of the band offsets of SiO<inf>2</inf> on clean n- and p-type GaN(0001), T.E. Cook Jr., C.C. Fulton, W. J. Mecouch, K.M Tracy, R. F. Davis, E.H. Hurt, G. Lucovsky, and Robert J. Nemanich, Journal of Applied Physics, Vol: 93 Read more... PDF (599.81 KB)
211 Response to Comment on ‘Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces’ [J. Appl. Phys. 91, 732 (2002)], P.J. Hartlieb, A. Roskowski, R.F. Davis, W. Platow, and Robert J. Nemanich, Journal of Applied Physics, Vol: 93 Read more... PDF (311.93 KB)
212 RandD of diamond films in the Frontier Carbon Technology Project and related topics, K. Kobashi, Y. Nishibayashi, Y. Yokota, Y. Ando, T. Tachibana, N. Kawakami, K. Hayashi, K. Inoue, K. Meguro, H. Imai, H. Furuta, T. Hirao, K. Oura, Y. Gotoh, H. Nakahara, H. Tsuji, J. Ishikawa, F. Koeck, R. Nemanich, T. Sakai, N. Sakuma, and H. Yoshida, Diamond and Related Materials, Vol: 12 Read more... PDF (2.01 MB)
213 Spatial distribution of electron emission sites for sulfur doped and intrinsic nanocrystalline diamond films, F.A.M. Koeck, J.M. Garguilo, Robert J. Nemanich, B.R. Weiner, and G. Morell, Diamond and Related Materials, Vol: 12 Read more... PDF (1.36 MB)
214 Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AIN films, J.D. Hartman, A.M. Roskowski, Z. J. Reitmeier, K.M. Tracy, R.F. Davis, and Robert J. Nemanich, Journal of Vacuum Science and Technology A, Vol: 21 Read more... PDF (1.29 MB)
215 Fibrous structures on diamond and carbon surfaces formed by hydrogen plasma under direct-current bias and field electron-emission properties, K. Kobashi, T. Tachibana, Y. Yokota, N. Kawakami, K. Hayashi, K. Yamamoto, Y. Koga, S. Fujiwara, Y. Gotoh, H. Nakahara, H. Tsuji, J. Ishikawa, F.A. Koeck, and Robert J. Nemanich, Journal of Materials Research Read more... PDF (3.07 MB)
216 Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(0001̄), B.J. Coppa, R.F. Davis, and Robert J. Nemanich, Applied Physics Letters Read more... PDF (345.78 KB)
217 Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy, , and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 743, 323-328 Read more... PDF (145.75 KB)
218 Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials, B.J. Rodriguez, A. Gruverman, A.I. Kingon, and Robert J. Nemanich, Journal of Crystal Growth, Vol: 246, 252-258 Read more... PDF (499.02 KB)
219 Single electron tunneling of nanoscale TiSi2 islands on Si, Jaehwan Oh, Vincent Meunier, Hoon Ham, and Robert J. Nemanich, Applied Physics Letters, Vol: 92 Read more... PDF (904.23 KB)
220 Current-voltage and imaging of TiSi 2 islands on Si(001) surfaces using conductive-tip atomic force microscopy, Jaehwan Oh and Robert J. Nemanich, Journal of Applied Physics, Vol: 92 Read more... PDF (451.03 KB)
221 X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy, Minseo Park, J.-P. Maria, J.J. Cuomo, Y.C. Chang, J.F. Muth, R.M. Kolbas, Robert J. Nemanich, E. Carlson, and J. Bumgarner, Applied Physics Letters, Vol: 81 Read more... PDF (357.53 KB)
222 Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films, A. Gruverman, B.J. Rodriguez, A.I. Kingon, and Robert J. Nemanich, Journal of Applied Physics, Vol: 92 Read more... PDF (827.95 KB)
223 Electronic states at the interface of Ti-Si oxide on Si(100), C.C. Fulton, G. Lucovsky, and Robert J. Nemanich, Journal of Vacuum Science and Technology B, Vol: 20 Read more... PDF (108.61 KB)
224 Piezoresponse force microscopy for polarity imaging of GaN, B.J. Rodriguez, A. Gruverman, A.I. Kingon, Robert J. Nemanich, O. Ambacher, Applied Physics Letters, Vol: 80 Read more... PDF (563.52 KB)
225 Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN, P.J. Hartlieb, A. Roskowski, R.F. Davis, and Robert J. Nemanich, Journal of Applied Physics, Vol: 91 Read more... PDF (451.03 KB)
226 Analysis of Ti-silicide formation with a thin Ta interlayer on Si (100), H. Jeon, H. Won, Y. Kim, J. Lee, and Robert J. Nemanich, Journal of the Korean Physical Society, Vol: 40, 903-907 Read more...
227 TiC nanoisland formation on 6H–SiC(0001)Si, W. Platow, Jaehwan Oh, Robert J. Nemanich, D.E. Sayers, J.D. Hartman, and R.F. Davis, Journal of Applied Physics, Vol: 91 Read more... PDF (612.76 KB)
228 Enhanced low-temperature thermionic field emission from surface-treated N-doped diamond films, F.A.M. Koeck, J.m. Garguilo, Billyde Brown, and Robert J. Nemanich, Diamond and Related Materials, Vol: 11 Read more... PDF (387.14 KB)
229 Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films, E. A. Preble, K.M. Tracy, S. Kesel, H. McLean, P.Q. Miraglia, Robert J. Nemanich, R.F. Davis, M. Albrecht, and David J. Smith, Journal of Applied Physics, Vol: 91 Read more... PDF (732 KB)
230 Superhard phase composed of single-wall carbon nanotubes, M. Popov, M. Kyotani, Robert J. Nemanich, and Y. Koga, Physical Review B - Condensed Matter and Material Physics, Vol: 65, 334081-3348084 Read more...
231 Measurements of the band offset of SiO2 on clean GaN, E.H. Hurt, T.E. Cook, Jr. K.M. Tracy, R.F. Davis, G. Lucovsky, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 693, 577-582 https://www.scopus.com/record/display.uri?eid=2-s2.0-0036375774&origin=inward&txGid=9a3ade9b8f71e75cb1fdad8f403e28ca
232 Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces, P.J. Hartlieb, A. Roskowski, R.F. Davis, W. Platow, and Robert J. Nemanich, Journal of Applied Physics, Vol: 91 Read more... PDF (454.42 KB)
233 Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL, D. Gracin, V. Borjanovic, B. Vlahovic, A. Sunda-Meya, T.M. Patterson, J.M. Dutta, S. Hauger, I. Pinayev, M.E. Ware, D. Alexson, B. von Roedern, and Robert J. Nemanich, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, Vol: 475 Read more...
234 Growth of epitaxial CoSi2 on 6H-SiC(0001)Si, W. Platow, Robert J. Nemanich, D.E. Sayers, J.D. Hartman, and R.F. Davis, Journal of Applied Physics, Vol: 90 Read more... PDF (430.37 KB)
235 Chemical, electrical, and structural properties of Au/Pd contacts on chemical vapor cleaned p-type GaN surfaces, P.J. Hartlieb, A. Roskowski, B.J. Rodriguez, Robert J. Nemanich, and R.F. Davis, Materials Research Society Symposium Proceedings, Vol: 693, 737-742 Read more...
236 Measurement of the effective piezoelectric constant of nitride thin films and heterostructures using scanning force microscopy, B.J. Rodriguez, D.-J. Kim, A.I. Kingon, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 693, 571-576 Read more...
237 Phonons in III-V nitrides: Confined phonons and interface phonons, M. Dutta, D. Alexson, L. Bergman, Robert J. Nemanich, R. Dupuis, K.W. Kim, S. Komirenko, and M. Stroscio, Physica E: Low-dimensional Systems and Nanostructures, Vol: 11 Read more...
238 Imaging electron emission from diamond film surfaces: N-doped diamond vs. nanostructured diamond, F.A.M. Koeck, J.M. Garguilo, and Robert J. Nemanich, Diamond and Related Materials, Vol: 10, 1714-1718 Read more...
239 Photon energy dependence of contrast in photoelectron emission microscopy of Si devices, V.W. Ballarotto, K. Siergrist, R.J. Phaneuf, E.D. Williams, W.-C. Yang, and Robert J. Nemanich, Applied Physics Letters, Vol: 78 Read more... PDF (390.74 KB)
240 CW Argon-ion laser crystallization of a-Si: H thin films, A. Sunda-Meya, D. Gracin, J. Dutta, B. Vlahovic, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 664 Read more... PDF (140.31 KB)
241 Wafer bonding of silicon carbide and gallium nitride, J. Lee, T.E. Cook. E.N. Bryan, J.D. Hartman, R.F. Davis, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 681 Read more... PDF (380.29 KB)
242 Formation of cobalt disilicide films on (3×3)6H-SiC(0001), W. Platow, D.K. Wood, K.M. Tracy, J.E. Burnette, Robert J. Nemanich, and D.E. Sayers, Physical Review B - Condensed Matter and Material Physics, Vol: 63 Read more... PDF (407.14 KB)
243 UV Raman study of A1(LO) and E2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates, D. Alexson, L. Bergman, Robert J. Nemanich, M. Dutta, M.A. Stroscio, C.A. Parker, S.M. Bedair, N.A> El=Masry, and F. Adar, Materials Research Society Symposium Proceedings, Vol: 639 Read more...
244 UV Raman study of A1(LO) and E2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates, D. Alexson, L. Bergman, Robert J. Nemanich, M. Dutta, M.A. Stroscio, C.A. Parker, S.M. Bedair, N.A. El-Masy, and F. Adar, Materials Research Society Symposium Proceedings, Vol: 639 Read more...
245 XAFS studies of the formation of cobalt silicide on (√3 × √3) SiC(0001), W. Platow, D.E. Wood, J.E. Burnette, D.E. Sayers, and Robert J. Nemanich, Journal of Synchrotron Radiation, Vol: 8, 475-477 Read more... PDF (239.31 KB)
246 Optical characterization of wide band gap amorphous semiconductors (a-Si:C:H): Effect of hydrogen dilution, Miseo Park, C.W. Teng, V. Sakhrani, M.B. McLaurin, R.M. Kolbas, R.C. Sanwald, Robert J. Nemanich, J.J. Hren, and J.J. Cuomo, Journal of Applied Physics, Vol: 89 Read more... PDF (423.32 KB)
247 Ultraviolet Raman study of 𝐴1(LO) and 𝐸2 phonons in In𝑥Ga1−xN alloys, Dimitri Alexson, Leah Bergman, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, C.A. Parker, S.M. Bedair, N.A. El-Masry, and Fran Adar, Journal of Applied Physics, Vol: 89 Read more... PDF (353.98 KB)
248 Surface morphology of SiGe epitaxial layers grown on uniquely oriented Si substrates, M.E. Ware and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 648 Read more...
249 Measurement of field emission from nitrogen-doped diamond films, A.T. Sowers, B.L. Ward, S.L. English, and Robert J. Nemanich, Diamond and Related Materials, Vol: 9, 1569-1573 Read more... PDF (287.52 KB)
250 Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111), H. jeon, B. Jung, Y.D. Kim, W. Yang, and Robert J. Nemanich, Journal of Applied Physics, Vol: 88, 2467-2471 Read more... PDF (473.65 KB)