Phonons in III-V nitrides: Confined phonons and interface phonons

Contributors:   M. Dutta, D. Alexson, L. Bergman, Robert J. Nemanich, R. Dupuis, K.W. Kim, S. Komirenko, and M. Stroscio

ABSTRACT

Phonons in III–V nitrides are examined experimentally for dimensionally confined systems and for alloys of InGaN with a view towards understanding the phonon modes of these systems. Results are compared with the predictions of Loudon's model for uniaxial semiconductors. The modes of the InGaN system are compared with those of the AlGaN ternary alloy. The first Raman measurements of interface phonons in binary GaN–AlN superlattices are presented.

Publisher: Physica E: Low-dimensional Systems and Nanostructures,   Volume: 11,   Published: 2001-10 ||   Read more...