Ultraviolet Raman study of 𝐴1(LO) and 𝐸2 phonons in In𝑥Ga1−xN alloys
Contributors: Dimitri Alexson, Leah Bergman, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, C.A. Parker, S.M. Bedair, N.A. El-Masry, and Fran Adar
ABSTRACT
We report on ultraviolet Raman spectroscopy of In𝑥Ga1−xN thin films grown on sapphire by metal-organic chemical vapor deposition. The 𝐴1(LO) and 𝐸2 phonon mode behavior was investigated over a large compositional range (0<x<0.50). Compelling evidence is presented for one-mode behavior for the 𝐴1(LO) phonon, and data suggestive of two-mode behavior are presented for the 𝐸2 phonon.