Robert-Nemanich

Publications

ORCID
Sr. Title File Year
301 Electron emission from etched diamond and its structural analysis, M Park, W.B. Choi, D.R. McGregor, L. Bergman, Robert J. Nemanich, J. J. Hren, and J.J. Cuomo, Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 271-272 Read more...
302 Field emission induced damage from nitrogen doped diamond films grown by microwave plasma CVD, A.T. Sowers, B.L. Ward, and Robert J. Nemanich, Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC, 202-203 Read more...
303 Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces, P.K. Baumann and Robert J. Nemanich, Surface Science, Vol: 409, 320-335 Read more... PDF (334.91 KB)
304 Co-deposition of cobalt disilicide on silicon-germanium thin films, P.T. Goeller, B.I. Boyanov, D.E. Sayers, and Robert J. Nemanich, Thin Solid Films, Vol: 320, 206-210 Read more... PDF (353.48 KB)
305 In situ studies of metal-semiconductor interactions with synchrotron radiation, D.E. Sayers, P.T. Goeller, B.I. Boyanov, and Robert J. Nemanich, Journal of Synchrotron Radiation, Vol: 5, 1050-1051 Read more... PDF (677.84 KB)
306 Morphology of NiSi film on Si(100): role of the interface strain, Eliane Maillard-Schaller, B.I. Boyanov, S. English, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 514, 185-189 Read more... PDF (2.01 MB)
307 Relationship of field emission characteristics on process gas nitrogen content in nitrogen doped diamond films, A.T. Sowers, B.L. Ward, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 508, 191-196 Read more... PDF (1.23 MB)
308 Thickness effects in the reaction of cobalt with silicon-germanium alloys, B.I. Boyanov, P.T. Goeller, D.E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 514, 165-170 Read more...
309 Real-time observation of Ti silicide epitaxial islands growth with the photoelectron emission microscopy, W. Yang, H. Ade, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 533, 197-202 Read more... PDF (2.32 MB)
310 Electron affinity and Schottky barrier height of metal-diamond (100), (111), and (110) interfaces, P.K. Baumann and Robert J. Nemanich, Journal of Applied Physics, Vol: 83, 2072-2082 Read more... PDF (514.98 KB)
311 Characterization of electron emitting surfaces of diamond and III-V nitrides, Robert J. Nemanich, P.K. Baumann, M.C. Benjamin, S.L. English, J.D. Hartman, A.T. Sowers, and B.L. Ward, New Diamond and Frontier Carbon Technology, Vol: 8, 211-223 Read more...
312 A free electron laser-photoemission electron microscope system (FEL-PEEM), H. Ade, W. Yang, S.L. English, J. Hartman, R.F. Davis, Robert J. Nemanich, V.N. Litvinenko, I.V. Pinayev, Y. Wu, J.M.J. Madey, and Y. Wu, Surface Review and Letters, Vol: 5, 1257-1268 Read more...
313 Growth and characterization of thin films and patterned substrates of III-V nitrides on SiC(0001) substrates, R.F. Davis, M.D. Bremser, O.H. Nam, T. Zheleva, W.G. Perry, B.L. Ward, and Robert J. Nemanich, Materials Science Forum, Vol: 264-268, 1111-1114 Read more...
314 Characterization of copper-diamond (100), (111), and (110) interfaces: Electron affinity and Schottky barrier, P. Baumann and Robert J. Nemanich, Physical Review B, Vol: 58, 1643-1654 Read more... PDF (423.69 KB)
315 Raman analysis of AlxGa1-xN films, Leah Bergman, Mitra Dutta, Michael D. Bremser, Ok-Hyun Nam, William G. Perry, Dimitri Alexon, Robert F. Davis, Cengiz M. Balkas, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 482, 543-548 Read more... PDF (1.41 MB)
316 Structure and stability of cobalt-silicon-germanium thin films, P.T. Goeller, B.I Boyanov, D.E. Sayers, and Robert J. Nemanich, Nuclear Instruments, and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol: 133, 84-89 Read more...
317 Electron emission properties of Si field emitter arrays coated with nanocrystalline diamond from fullerene precursors, T.G. McCauley, T.D. Corrigan, A.R. Krauss, O. Auciello, D. Zhou, D.M. Gruen, D. Temple, R.P.H. Chang, S. English, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 498, 227-232 Read more... PDF (1.91 MB)
318 Morphology of silicon oxides on silicon carbide, M.L. O'Briend, S. Pejdo, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 483, 437-442 Read more... PDF (2.49 MB)
319 Field emission from nitrogen-doped diamond film, M. Park, L. Bergman, W.B. Choi, A.T. Sowers, Robert J. Nemanich, J.J. Hren, and J.J. Cuomo, Materials Research Society Symposium Proceedings, Vol: 498, 239-244 Read more... PDF (988.92 KB)
320 Preferential Co-Si bonding at the Co/SiGe(100) interface, B.I. Boyanov, P.T. Goeller, D.E. Sayers, and Robert J. Nemanich, Applied Physics Letters, Vol: 71, 3060-3062 Read more... PDF (355.13 KB)
321 Correlation of morphology and electrical properties of nanoscale TiSi2 epitaxial islands on Si (001), W. Yang, F.J. Jedema, H. Ade, and Robert J. Nemanich, Thin Solid Films, Vol: 308-309, 627-633 Read more... PDF (112 KB)
322 Electron emission properties of crystalline diamond and III-nitride surfaces, Robert J. Nemanich, P.K. Baumann, M.C. Benjamin, O.-H. Nam, A.T. Sowers, B.L. Ward, H. Ade, and R.F. Davis, Applied Surface Science, Vol: 130-132, 694-703 Read more... PDF (400.64 KB)
323 Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications, A.T. Sowers, J.A. Christman, M.D. Bremser, B.L. Ward, R.F. Davis, and Robert J. Nemanich, Applied Physics Letters, Vol: 71, 2289-2291 Read more... PDF (425.39 KB)
324 Raman analysis of the configurational disorder in AlxGa1-xN films, L. Bergman, M.D. Bremser, W.G. Perry, R.F. Davis, M. Dutta, and Robert J. Nemanich, Applied Physics Letters, Vol: 71, 2157-2159 Read more... PDF (364.91 KB)
325 Electron emission from metal-diamond (100), (111) and (110) interfaces, P.K. Baumann and Robert J. Nemanich, Diamond and Related Materials, Vol: 7, 612-619 Read more... PDF (907.04 KB)
326 Electrical and structural properties of zirconium germanosilicide formed by a bilayer solid state reaction of Zr with strained Si1-xGex alloys, Z. Wang, D.B. Aldrich, Robert J. Nemanich, and D.E. Sayers, Journal of Applied Physics, Vol: 82, 2342-2348 Read more... PDF (922.34 KB)
327 Growth and characterization of bulk crystals, thin films and patterned structures of AlN, GaN and AlxGa1-xN on SiC(0001) substrates and device-related research, Robert F. davis, C.m. Balkas, L. Bergman, M.D. Bremser, O.H. Nam, W.G. perry, I. Smagin, Z. Sitar, B.L. Ward, T. Zheleva, R. Kolbas, and Robert J. Nemanich, LEOS Summer Topical Meeting, 9 Read more...
328 Comparison of electron affinity and Schottky barrier height of zirconium and copper-diamond interfaces, P.K. Baumann and Robert J. Nemanich, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol: 15, 1236-1240 Read more... PDF (112 KB)
329 Sublimation growth and characterization of bulk aluminum nitride single crystals, C.M. Balkas, Z. Sitar, T. Zheleva, L. Bergman, Robert J. Nemanich, and R.F. Davis, Journal of Crystal Growth, Vol: 179, 363-370 Read more... PDF (537.28 KB)
330 Dependence of the C49-C54 TiSi2 phase transition temperature on film thickness and Si substrate orientation, H. Jeon, G. Yoon, and Robert J. Nemanich, Thin Solid Films, Vol: 299, 78-182 Read more... PDF (316.33 KB)
331 Growth of GaN and Al0.2Ga0.8N on patterned substrates via organometallic vapor phase epitaxy, Ok-Hyun Nam, Michael D. Bremser, Brandon L. Ward, Robert J. Nemanich, and Robert F. Davis, Japanese Journal of Applied Physics, Part 2: Letters, Vol: 36, L532-L535 Read more... PDF (2.22 MB)
332 AFM analysis of HF vapor cleaned SiO2 surfaces, R.J. Carter, E.J. Bergman, D.R. Lee, J. Owyang, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 477, 481-486 Read more...
333 Photoluminescence from mechanically milled Si and SiO 2 powders, T.D. Shen, I. Shmagin, C.C. Koch, R.M. Kolbas, Y. Fahmy, L. Bergman, Robert J. Nemanich, M.T. McClure, Z. Sitar, and M.X. Quan, Physical Review B, Vol: 55 Read more... PDF (187.23 KB)
334 Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height, P.K. Baumann, S.P. Bozeman, B.L. Ward, and Robert J. Nemanich, Diamond and Related Materials, Vol: 6, 398-402 Read more... PDF (627.17 KB)
335 Large crystallite polysilicon deposited using pulsed-gas PECVD at temperatures less than 250°C, E. Srinivasan, S.J. Ellis, Robert J. Nemanich, and G.N. Parsons, Materials Research Society Symposium Proceedings, Vol: 452, 989-994 Read more...
336 The characterization of strain, impurity content, and crush strength of synthetic diamond crystals, T.L. McCormick, W.E. Jackson, and Robert J. Nemanich, Journal of Materials Research, Vol: 12, 253-263 Read more... PDF (394.85 KB)
337 An integrated growth and analysis system for in-situ XAS studies of metal-semiconductor interactions, Z. Wang, P.T. Goeller, B.I. Boyanov, D.E. Sayers, and Robert J. Nemanich, Journal De Physique. IV: JP, Vol: 7, C-561-C2-564 Read more...
338 Growth of bulk AlN and GaN single crystals by sublimation, C.M. Balkas, Z. Sitar, T. Zheleva, L. Bergman, J.F. Muth, I.K. Shmagin, R. Kolbas, Robert J. Nemanich, and R.F. Davis, Materials Research Society Symposium Proceedings, Vol: 449, 41-46 Read more...
339 Nitride-based thin-film cold cathode emitters, J.A. Christman, A.T. Sowers, M.D. Bremser, B.L. Ward, R.F. Davis, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 449, 1121-1126 Read more...
340 Selective growth of GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy, O.H. Nam, M.D. Bremser, B.L. Ward, Robert J. Nemanich, and R.F. Davis, Materials Research Society Symposium Proceedings, Vol: 449, 107-112 Read more...
341 Surface morphology of nanoscale TiSi2 epitaxial islands on Si(001), Woochul Yang, F.J. Jedema, H. Ade, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 448, 223-228 Read more...
342 Raman analysis of electron-phonon interactions in GaN films, L. Bergman, M.D. Bremser, J.A. Christman, S.W. King, R.F. Davis, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 449, 725-730 Read more...
343 Thin films of CoSi2 co-deposited onto Si1-xGex alloys, Peter. Goeller, Boyan I. Boyanov, Dale E. Sayers, and Robert J. Nemanich, Materials Research Society Symposium Proceedings, Vol: 440, 487-492 Read more...
344 Surface electronic structure of clean and hydrogen-chemisorbe alloy surfaces, J. Ku and Robert J. Nemanich, Physical Review B, Vol: 54 Read more... PDF (200.82 KB)
345 Phase transformations during microcutting tests on silicon, B.V. Tannikella, A.H. Somasekhar, A.T. Sowers, Robert J. Nemanich, and R.O. Scattergood, Applied Physics Letters, Vol: 69, 2870-2872 Read more... PDF (453.16 KB)
346 Hydrogen evolution from strained SixGe1-x(100)2×1:H surfaces, J.-H. Ku and Robert J. Nemanich, Journal of Applied Physics, Vol: 80, 4715-4721 Read more... PDF (490 KB)
347 Characterization of cobalt-diamond (100) interfaces: Electron affinity and Schottky barrier, P.K. Baumann and Robert J. Nemanich, Applied Surface Science, Vol: 104/105, 267-273 Read more... PDF (462.85 KB)
348 Structural investigation of the initial interface region formed by thin titanium films on silicon (111), A.M. Edwards, Y. Dao, D.E. Sayers, and Robert J. Nemanich, Journal of Applied Physics, Vol: 80, 183-187 Read more... PDF (409.09 KB)
349 Interface stability of Ti(SiG and SiGe alloys: Tie lines in the ternary equilibrium diagram, D. Aldrich, F. d'Heurle, and Robert J. Nemanich, Physical Review B, Vol: 53 Read more... PDF (123.66 KB)
350 Electron emission measurements from CVD diamond surfaces, S.P. Bozeman, P.K. Baumann, B.L. Ward, M.J. Powers, J.J. Cuomo, D.L. Dreifus, and Robert J. Nemanich, Diamond and Related Materials, Vol: 5, 802-806 Read more... PDF (493.39 KB)