Preferential Co-Si bonding at the Co/SiGe(100) interface

Contributors:   B.I. Boyanov, P.T. Goeller, D.E. Sayers, and Robert J. Nemanich

ABSTRACT

The initial stages of the reaction of Co with Si0.79Ge0.21(100) were studied in situ with extended x-ray absorption fine structure spectroscopy and reflection high energy electron diffraction. The Si:Ge ratio in the first coordination shell of Co in sub-monolayer Co films was found to increase with film thickness and annealing temperature, indicating preferential formation of Co-Si bonds. The impact of the observed preference for Co-Si bonding on the morphology of epitaxial CoSi2/S1-xGex heterostructures is discussed.

Publisher: Applied Physics Letters,   Volume: 71,   3060-3062 ||  Published: 1997-11 ||   PDF (355.13 KB) ||   Read more...