Growth and characterization of bulk crystals, thin films and patterned structures of AlN, GaN and AlxGa1-xN on SiC(0001) substrates and device-related research
Contributors: Robert F. davis, C.m. Balkas, L. Bergman, M.D. Bremser, O.H. Nam, W.G. perry, I. Smagin, Z. Sitar, B.L. Ward, T. Zheleva, R. Kolbas, and Robert J. Nemanich
ABSTRACT
Single crystals of AlN and GaN were grown via sublimation-recondensation. Monocrystalline thin films and heterojunctions of GaN and AlxGa1-xN alloys were grown via metalorganic vapor phase epitaxy (MOVPE). Selective growth of GaN and AlxGa1-xN was conducted on stripe and circular patterned GaN/AlN/6-H-SiC multilayer substrates. Platinum-based ohmic and rectifying contacts were also fabricated via electron beam evaporation surfaces cleaned using Si deposition/flash evaporation techniques.