In situ studies of metal-semiconductor interactions with synchrotron radiation

Contributors:   D.E. Sayers, P.T. Goeller, B.I. Boyanov, and Robert J. Nemanich

ABSTRACT

The capabilities and performance of a UHV system for in situ studies of metal-semiconductor interactions are described. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 × 10-10 torr. The deposited materials and their reaction products can be studied in situ with RHEED, XAFS, AES, XPS, UPS and ARUPS. Results from a study of the reaction of 0.7- and 1.7-monolayer-thick films of cobalt with strained silicon-germanium alloys are presented. The signal-to-noise ratio obtained in these experiments indicates that the apparatus is capable of supporting in situ EXAFS studies of ∼0.1-monolayer-thick films.

Publisher: Journal of Synchrotron Radiation,   Volume: 5,   1050-1051 ||  Published: 1998-05 ||   PDF (677.84 KB) ||   Read more...