Growth of bulk AlN and GaN single crystals by sublimation

Contributors:   C.M. Balkas, Z. Sitar, T. Zheleva, L. Bergman, J.F. Muth, I.K. Shmagin, R. Kolbas, Robert J. Nemanich, and R.F. Davis

ABSTRACT

Single crystals of AlN to 1 mm thickness were grown in the range 1950-2250°C on 10 × 10 mm2 α(6H) - SiC(0001) substrates via sublimation-recondensation method. Hot pressed polycrystalline AIN was used as the source material. The color varied from transparent to dark green/blue. The crystal morphology varied with growth conditions. Most crystals were 0.3 mm -1 mm thick transparent layers which completely covered the substrates. Raman, optical and transmission electron microscopy (TEM) results are presented. Single crystals of gallium nitride (GaN) were also grown by subliming powders of this material under an ammonia (NH3) flow. Optical microscopy, Raman and photoluminescence results are shown.

Publisher: Materials Research Society Symposium Proceedings,   Volume: 449,   41-46 ||  Published: 1997-01 ||   Read more...