High Voltage Diodes in Diamond Using (100)-A nd (111)-Substrates

Contributors:   Maitreya Dutta, Franz A. M. Koeck, Wenwen Li, Robert J. Nemanich, and Srabanti Chowdhury

ABSTRACT

We present a comparative study of PIN structures in diamond on type IIa (100)- and type IIb (111)-oriented bulk diamond substrates. An 8.5-μm thick i-layer demonstrated a blocking voltage>1kV for the (100)-oriented diamond sample without any mesa isolation, passivation, or edge termination structures. PIN diodes with a 530nm thick drift region, on the (111)-sample, demonstrated a blocking voltage of 207V at a current level of 1A/cm 2 with a corresponding blocking electric field of 3.9MV/cm. A deep ultraviolet light emission was observed only in (111)-diodes under forward bias, confirming well-behaved p-n junction characteristics in (111) as compared to (100).

Publisher: IEEE Electron Device Letters,   Volume: 38, Issue 5,   600 - 603 ||  Published: 2017-03 ||   PDF (1.16 MB) ||   Read More...