HYDROGEN ENVIRONMENTS AND DEFECTS IN PLASMA-DEPOSITED a-Si:H.
Contributors: D.K. Biegelsen, G. Lucovsky, J.C. Knights, and Robert J. Nemanich
ABSTRACT
A model for defects in a-Si:H has been deduced from experiments on samples prepared under widely varying conditions. Defects seem to be localized low density regions induced by and containing short polymeric SiH//x units. For high spin samples, the material is effectively a highly cross-linked polymer; for low spin samples, the defects are widely separated.