Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes
Contributors: Prudhvi Ram Peri, Kevin Hatch, Daniel Messina, Kai Fu, Yuji Zhao, Robert Nemanich and David Smith
ABSTRACT
Publisher: Microscopy and Microanalysis,
Volume: 26,
840–842 ||
Published:
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