Field emission induced damage from nitrogen doped diamond films grown by microwave plasma CVD

Contributors:   A.T. Sowers, B.L. Ward, and Robert J. Nemanich

ABSTRACT

The field emission properties of nitrogen doped diamond grown on n-type silicon by microwave plasma chemical vapor deposition (CVD) were explored. Nitrogen gas was used as the nitrogen doping source and was added directly to the process gas. Following deposition, the micro-Raman and photoluminescence spectra were recorded using an excitation source. The sample surfaces were also examined using scanning electron microscopy and optical microscopy. Field emission measurements were obtained in ultrahigh vacuum (UHV) with a position-variable anode system. With this arrangement, current voltage measurements are possible at numerous cathode to anode spacings.

Publisher: Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC,   202-203 ||  Published: 1998-07 ||   Read more...