Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: Comparisons between experiment and ab initio calculations

Contributors:   G. Lucovsky, Y. Zhang, C.C. Fulton, Y. Zou, H. Ade, J.L. Whitten, and Robert J. Nemanich

ABSTRACT

This paper uses X-ray absorption spectroscopy and vacuum ultra-violet spectroscopic ellipsometry to study the electronic structure of high-k transition metal (TM) oxide gate dielectrics. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d* states, which define the optical band gap, including their relationship to the band gap, Eg, of the oxide.

Publisher: Journal of Electron Spectroscopy and Related Phenomena,   144-147 ||  Published: 2005-03 ||   PDF (149.89 KB) ||   Read more...