Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

Contributors:   S.W. King, R.F. Davis, and Robert J. Nemanich

ABSTRACT

The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C-SiC (111)-(1x1) surfaces at 600 °C has been investigated using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two-dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of~2 nmbeyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C-SiC (111)-(1x1) surface to form a ScSix and ScCx interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ~0.5 eV of upward band bending resulting in a Schottky barrier of 0.65±0.15 eV. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Publisher: Physica Status Solidi (B) Basic research,   Volume: 252,   391-396 ||  Published: 2015-02 ||   PDF (590.31 KB) ||   Read more...