High-Temperature Electronics
Diamond has the highest known thermal conductivity, which enables high power operation, and the high electron and hole mobilities support high power and efficient power switching characteristics. These properties and the chemical stability of diamond contribute to its potential as a high temperature semiconductor capable of operating well above 500°C. Moreover, the wide bandgap and bipolar characteristics enable junction field effect transistor (JFET) designs, which are notably more stable at high temperature than oxide field effect transistor designs. This project will develop, test and simulate diamond power transistors for power conversion, distribution, and mechanical system control at high temperatures (>500°C). The diamond power transistor and diode devices will be combined to design and demonstrate a power conversion module that will operate at high temperature (>500°C) for extended periods (>60 days).
Beyond demonstration of a lateral and vertical diamond JFET, the project will develop computational models to simulate and design diamond diode and transistor devices for specific characteristics. The team will design and simulate a diamond power conversion module relevant to planetary space missions. The project will identify specific space exploration mission objectives that would be impacted by diamond power electronics.
Beyond demonstration of a lateral and vertical diamond JFET, the project will develop computational models to simulate and design diamond diode and transistor devices for specific characteristics. The team will design and simulate a diamond power conversion module relevant to planetary space missions. The project will identify specific space exploration mission objectives that would be impacted by diamond power electronics.